SGS Thomson Microelectronics SD1733 Datasheet
.OPTIMIZED FOR SSB
.30 MHz
.50 VOLTS
.COMMON EMITTER
.GOLD METALLIZATION
.P
OUT
75 W MIN. WITH 14.0 dB GAIN
=
SD1733 (TH513)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICA TIONS
.380 4L ST UD (M135)
epoxy sealed
ORDER CODE
SD1733
PIN CONNECTION
BRANDING
TH513
DESCRIPT I ON
The SD1733 is a 50 V Class AB epitaxial silicon
NPN planar transistor designed primarily for SSB
and VHF communications. This device utilizes
emitter ballasting for improved ruggedness and
reliability.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 110 V
Collector-Emitter Voltage 55 V
Emitter-Base Voltage 4.0 V
Device Current 3.25 A
Power Dissipation 127 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 2.0 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/4
SD1733 (TH513)
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
h
CES
CEO
EBO
FE
IC= 100mA VBE= 0V 110 — — V
IC= 200mA IB= 0mA 55 — — V
IE= 10mA IC= 0mA 4.0 — — V
VCE= 6V IC= 1.4A 19 — 50 —
DYNAMIC
Symbol Test C ond itions
P
OUT
GP*P
IMD* P
η
c* P
C
OB
Note: * f
f = 30 MHz VCE= 50 V 75 — — W
= 75 W PEP VCE= 50 V 14 — — dB
OUT
= 75 W PEP VCE= 50 V — — −30 dBc
OUT
= 75 W PEP VCE= 50 V 37 — — %
OUT
f = 1 MHz VCB= 50 V — — 100 pF
30.00 MHz, f
=
1
30.001 MHz
=
2
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/4
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