.OPTIMIZED FOR SSB
.30 MHz
.50 VOLTS
.COMMON EMITTER
.GOLD METALLIZATION
.P
OUT
75 W MIN. WITH 14.0 dB GAIN
=
SD1733 (TH513)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICA TIONS
.380 4L ST UD (M135)
epoxy sealed
ORDER CODE
SD1733
PIN CONNECTION
BRANDING
TH513
DESCRIPT I ON
The SD1733 is a 50 V Class AB epitaxial silicon
NPN planar transistor designed primarily for SSB
and VHF communications. This device utilizes
emitter ballasting for improved ruggedness and
reliability.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 110 V
Collector-Emitter Voltage 55 V
Emitter-Base Voltage 4.0 V
Device Current 3.25 A
Power Dissipation 127 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 2.0 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/4
SD1733 (TH513)
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
h
CES
CEO
EBO
FE
IC= 100mA VBE= 0V 110 — — V
IC= 200mA IB= 0mA 55 — — V
IE= 10mA IC= 0mA 4.0 — — V
VCE= 6V IC= 1.4A 19 — 50 —
DYNAMIC
Symbol Test C ond itions
P
OUT
GP*P
IMD* P
η
c* P
C
OB
Note: * f
f = 30 MHz VCE= 50 V 75 — — W
= 75 W PEP VCE= 50 V 14 — — dB
OUT
= 75 W PEP VCE= 50 V — — −30 dBc
OUT
= 75 W PEP VCE= 50 V 37 — — %
OUT
f = 1 MHz VCB= 50 V — — 100 pF
30.00 MHz, f
=
1
30.001 MHz
=
2
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/4
TEST CIRCUIT
SD1733 (TH513)
BIAS CIRCUIT
C1 : 20 - 500pF
C2 : 50 - 500pF
C3, C4 : 3.9nF
C5 : 100nF
C6 : 2.2µF
C7 : 56pF
C9 : 100pF
C10 : 20 - 150pF
C11 : 20 - 500pF
L1 : 3 Turns,Diameter Wire 1.5mm, Int. Diameter 7mm,
L2 : 22µH Choke Coil
L3 : 4 Turns,Diameter Wire 1.5mm, Int. Diameter 10mm,
L4 : Ferroxcube Choke Coil
L5 : 7 Turns,Diameter Wire 1.5mm, Int. Diameter 12mm,
R2 : 33
R3 : 4.7
Pitch 2.5mm
Pitch 2.5mm
Pitch 2.5mm
Ω
Ω
3/4
SD1733 (TH513)
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0135
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequences of useof such information nor forany infringement of patents orother rights of third parties which may results from its use. No
license isgranted byimplication or otherwiseunder any patentor patentrights of SGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication aresubject to changewithout notice. This publicationsupersedesand replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse ascritical componentsinlife supportdevices orsystemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil - France- Germany- HongKong - Italy - Japan - Korea - Malaysia -Malta -Morocco - The Netherlands -
Singapore - Spain - Sweden- Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
4/4
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