SGS Thomson Microelectronics SD1732 Datasheet
RF & MICROWAVE TRANSISTORS
.470 - 860 MHz
.25 VOLTS
.CLASS A PUSH PULL
.D ESI GN ED FOR H I GH PO WER L INEAR
OPERATION
.HIGH SATURATED POWER CAPABILITY
.GOLD METALLIZATION
.DIFFUSED EMITTER BALLAST
RESISTORS
. CO MMON EMITTER CONFIGURATION
.INTERNAL INPUT MATCHING
.P
OUT
14.0 W MIN. WITH 8.5 dB GAIN
=
SD1732 (TDS595)
TV LINEA R APPLICAT IONS
.250 x .320 4LF L (M156)
epoxy sealed
ORDER CODE
SD1732
PIN CONNECTION
BRANDING
TDS595
DESC RIPTIO N
The SD1732 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class A operation in
UHF and Band IV, V television transmitters and
transposers.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 45 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 4.0 V
Device Current 2 x 2.6 A
Power Dissipation 65 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 2.5 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
65 to +150
−
°
C
°
C
November 1992
1/6
SD1732 (TDS595)
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
h
CBO
CEO
EBO
FE
IC= 20mA IE= 0mA 45 — — V
IC= 40mA IB= 0mA 25 — — V
IE= 5mA IC= 0mA 3.0 — — V
VCE= 20V IC= 0.5A 10 — — —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
P
IMD3*P
CMD** P
C
OB
Note: *IMD 3 Tone Testing
f = 845 MHz VCE= 25 V ICQ= 2x850mA 14 — — W
P
= 14 W VCE= 25 V ICQ= 2 x 850 mA 8.5 — — dB
OUT
= 14 W VCE= 25 V ICQ= 2x850mA — −47 — dBc
OUT
= 14 W VCE= 25 V ICQ= 2 x 850 mA — 20 — %
OUT
f = 1 MHz VCB= 25 V — — 20 pF
Vision Carrier−8dBref
Sound Carrier−7dBref
Sideband Carrier−16 d B r ef
** CMD: Cr os s M odulat ion Distor t ion of the V oltage V aria tion (%) of Sound C arrier W hen Vision Carrier is
Switched from 0 to −20 dB
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/6
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