SGS Thomson Microelectronics SD1731-14 Datasheet
.OPTIMIZED FOR SSB
.30 MHz
.50 VOLTS
.EFFICIENCY 40%
.COMMON EMITTER
.GOLD METALLIZATION
.P
OUT
250 W PEP WITH 12 dB GAIN
=
SD1731-14 (ST448)
RF & MICROWAVE TRANSISTORS
HF SSB APPLIC ATION S
PRELIMINARY DATA
.500 4LFL (M174)
epoxy sealed
OR DER CODE
SD1731-14
PI N CONNECTI O N
BRANDING
ST448
DESCRIP TION
The SD1731 is a 50 V epitaxial silicon NPN planar
transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXI MUM RATI NGS (T
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMAL DAT A
R
TH(j-c)
R
TH(c-s)
Collector-BaseVoltage 110 V
Collector-Emitter Voltage 55 V
Emitter-Base Voltage 4.0 V
Device Current 20 A
Power Dissipation (T
Junction Temperature +200
Storage Temperature
Junction-CaseThermal Resistance 0.48 °
Case-Heatsink Thermal Resistance 0.2 °
heatsink
case
= 25°C)
≤ 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
257 W
65 to +150
−
°
C
°
C
C/W
C/W
Se ptember 6, 1 996
SD 1731-14 (ST448)
ELECTRICAL SPECIFICATIONS
STATIC (T
Symbol Tes t Conditions
BV
CBO I
BV
CEO I
BV
EBO I
I
CEO V
I
CES
h
FE
DYNAMIC (T
Symbol Test Conditions
P
OUT
*
G
P
IMD*
η
c* P
C
OB
Note: *f
1
= 25°C)
case
= 200 mA IE= 0mA
C
= 200 mA IB= 0mA
C
= 20 mA IC= 0mA
E
= 30 V IB= 0mA
CE
VCE= 55 V VBE= 0V
VCE= 6V IC=10 A
heatsink
= 25°C)
f = 30 MHz VCC= 50 V ICQ= 150 mA
= 250 WPE P VCC= 50 V ICQ= 150 mA
P
OUT
P
= 250 WPE P VCC= 50 V ICQ= 150 mA
OUT
= 250 WPE P VCC= 50 V ICQ= 150 mA
OUT
f = 1 MHz VCB= 50 V
30.00 MHz, f
=
30.001 MHz
=
2
Value
Min. Typ. Ma x.
Un it
110 — — V
55 — — V
4.0 — — V
——5mA
— — 10 mA
5 — 20 —
Value
Min. Typ. Ma x.
Un it
250 — — W
12 — — dB
——
−30
dBc
40 45 — %
—270— pf
2/5
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