.OPTIMIZED FOR SSB
.30 MHz
.50 VOLTS
.EFFICIENCY 40%
.COMMON EMITTER
.GOLD METALLIZATION
.P
OUT
250 W PEP WITH 12 dB GAIN
=
SD1731-14 (ST448)
RF & MICROWAVE TRANSISTORS
HF SSB APPLIC ATION S
PRELIMINARY DATA
.500 4LFL (M174)
epoxy sealed
OR DER CODE
SD1731-14
PI N CONNECTI O N
BRANDING
ST448
DESCRIP TION
The SD1731 is a 50 V epitaxial silicon NPN planar
transistor designed primarily for SSB communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXI MUM RATI NGS (T
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMAL DAT A
R
TH(j-c)
R
TH(c-s)
Collector-BaseVoltage 110 V
Collector-Emitter Voltage 55 V
Emitter-Base Voltage 4.0 V
Device Current 20 A
Power Dissipation (T
Junction Temperature +200
Storage Temperature
Junction-CaseThermal Resistance 0.48 °
Case-Heatsink Thermal Resistance 0.2 °
heatsink
case
= 25°C)
≤ 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
257 W
65 to +150
−
°
C
°
C
C/W
C/W
Se ptember 6, 1 996
SD 1731-14 (ST448)
ELECTRICAL SPECIFICATIONS
STATIC (T
Symbol Tes t Conditions
BV
CBO I
BV
CEO I
BV
EBO I
I
CEO V
I
CES
h
FE
DYNAMIC (T
Symbol Test Conditions
P
OUT
*
G
P
IMD*
η
c* P
C
OB
Note: *f
1
= 25°C)
case
= 200 mA IE= 0mA
C
= 200 mA IB= 0mA
C
= 20 mA IC= 0mA
E
= 30 V IB= 0mA
CE
VCE= 55 V VBE= 0V
VCE= 6V IC=10 A
heatsink
= 25°C)
f = 30 MHz VCC= 50 V ICQ= 150 mA
= 250 WPE P VCC= 50 V ICQ= 150 mA
P
OUT
P
= 250 WPE P VCC= 50 V ICQ= 150 mA
OUT
= 250 WPE P VCC= 50 V ICQ= 150 mA
OUT
f = 1 MHz VCB= 50 V
30.00 MHz, f
=
30.001 MHz
=
2
Value
Min. Typ. Ma x.
Un it
110 — — V
55 — — V
4.0 — — V
——5mA
— — 10 mA
5 — 20 —
Value
Min. Typ. Ma x.
Un it
250 — — W
12 — — dB
——
−30
dBc
40 45 — %
—270— pf
2/5
TEST CIRCUIT
SD1731-14 (S T448)
C1 : Arco 426 + 220pF + 330pF Chips
C2 : 2 x 10nF Chips
C3 : Arco 4615 + 2.2nF + 2 x 1nF LCC + 4.7nF +
C4 : Arco 4213 + 330pF Chip
C5 : 10nF Chip
C6 : 3 x 10nF Chips
C7, C8, C9,
C10, C11 :1nF + 10nF + 100nF + 4.7
L1 : 3 Turns of 1.2mm Unenameled Wire Diameter,
L2, L3 :8 Turns of 0.55mm Enameled Wire on Ferrite Core
560pf Chps
µ
7.1mm, Length 13mm
Phillips 4C6 97170 (9 x 6 x 3)
F, 63V + 100µF, 63V
L4 : 10 Turns of 1.2mm Enameled Wire, Diameter
8.1mm, Length 20mm
L5 : 7 Turns of 1.2mm Enameled Wire on Ferrite Core
Phillips 4C6 97180
T1 : 6:3.5 Impedance Transformer on toriod Phillips
4C6 97180
T2 : Twisted Pair 4:1 Transformer, 4 Turns Made with
1.0mm Enameled on toriod Phillips 4C6 97180
T3 : Feedback Transformer
Primary: 2 Turns of 1mm Enameled Wire
Secondary: 8 Turns of 1mmEnameled Wire
T4 : Twisted Pair 4:1 Transformer, 4 Turns of bifilar Twisted
1.2mm Wires on Ferrite Core Phillips 4C6 97200
3/5
SD 1731-14 (ST448)
MOUNTING CI RCUIT
BIAS CIRCUIT
4/5
PACKAGE MECH ANICAL DATA
Ref.: Dwg. N o.12-0174
UDCS No. 1011000 r ev. C
SD1731-14 (S T448)
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use.
No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications
mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously
supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1996 SGS-THOMSON Microelectronics - All Rights Reserved
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5/5
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