SGS Thomson Microelectronics SD1730 Datasheet
.OPTIMIZED FOR SSB
.30 MHz
.28 VOLTS
.IMD −30dB
. EFFICIENCY 40%
.CO MMON EMITTER
.GOLD METALLIZATION
.P
OUT
220 W PEP W IT H 12 dB GAIN
=
SD1730 (TH560)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICA TIONS
.500 4 LFL (M174)
epoxy sealed
ORDER CODE
SD1730
PIN CONNECTION
BRANDING
TH560
DESC RIPTION
The SD1730 is a 28 V epitaxial silicon NPN planar
transistor designed primarily for SSB and VHF
communications. The devices utlizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DATA
R
TH(j-c)
Collector-Base Voltage 70 V
Collector-Emitter Voltage 35 V
Emitter-Base Voltage 4.0 V
Device Current 16 A
Power Dissipation 320 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.6 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
September 7, 1994
1/6
SD1730 (TH560)
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CESIC
BV
CEOIC
BV
EBOIE
I
CEO
I
CES
h
FE
= 100 mA VBE= 0 V 70 — — V
= 200 mA IB= 0mA 35 — — V
= 20 mA IC= 0mA 4.0 — — V
VCE= 30 V IE= 0mA — — 5 mA
VCE= 35 V IE= 0mA — — 5 mA
VCE= 5V IC=7A 15 — 60 —
DYNAMIC
Symbol Test C ond itions
P
OUT
PG*P
IMD* P
η
c* P
C
OB
Load
f = 30 MHz VCE= 28 V ICQ= 750 mA 220 — — W
= 220 W PEP VCE= 28 V ICQ= 750 mA 12 — — dB
OUT
= 220 W PEP VCE= 28 V ICQ= 750 mA — — −30 dBc
OUT
= 220 W PEP VCE= 28 V ICQ= 750 mA 40 — — %
OUT
f = 1 MHz VCB= 28 V — 450 — pF
P
= 220 W PEP VCE= 28 V ICQ= 750 mA — ∞:1 — VSWR
OUT
Mismatch
Note: * f
30.00 MHz, f
=
1
30.001 MHz
=
2
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Uni t
Uni t
TYPICA L P ERFO R MA NCE
POWER OUTPUT PEP vs POWER INPUT
COLLECTOR EFFICIENCY vs POWER OUTPUT
PEP
2/6
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