.OPTIMIZED FOR SSB
.30 MHz
.28 VOLTS
.IMD −30dB
. EFFICIENCY 40%
.CO MMON EMITTER
.GOLD METALLIZATION
.P
OUT
220 W PEP W IT H 12 dB GAIN
=
SD1730 (TH560)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICA TIONS
.500 4 LFL (M174)
epoxy sealed
ORDER CODE
SD1730
PIN CONNECTION
BRANDING
TH560
DESC RIPTION
The SD1730 is a 28 V epitaxial silicon NPN planar
transistor designed primarily for SSB and VHF
communications. The devices utlizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DATA
R
TH(j-c)
Collector-Base Voltage 70 V
Collector-Emitter Voltage 35 V
Emitter-Base Voltage 4.0 V
Device Current 16 A
Power Dissipation 320 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.6 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
September 7, 1994
1/6
SD1730 (TH560)
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CESIC
BV
CEOIC
BV
EBOIE
I
CEO
I
CES
h
FE
= 100 mA VBE= 0 V 70 — — V
= 200 mA IB= 0mA 35 — — V
= 20 mA IC= 0mA 4.0 — — V
VCE= 30 V IE= 0mA — — 5 mA
VCE= 35 V IE= 0mA — — 5 mA
VCE= 5V IC=7A 15 — 60 —
DYNAMIC
Symbol Test C ond itions
P
OUT
PG*P
IMD* P
η
c* P
C
OB
Load
f = 30 MHz VCE= 28 V ICQ= 750 mA 220 — — W
= 220 W PEP VCE= 28 V ICQ= 750 mA 12 — — dB
OUT
= 220 W PEP VCE= 28 V ICQ= 750 mA — — −30 dBc
OUT
= 220 W PEP VCE= 28 V ICQ= 750 mA 40 — — %
OUT
f = 1 MHz VCB= 28 V — 450 — pF
P
= 220 W PEP VCE= 28 V ICQ= 750 mA — ∞:1 — VSWR
OUT
Mismatch
Note: * f
30.00 MHz, f
=
1
30.001 MHz
=
2
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Uni t
Uni t
TYPICA L P ERFO R MA NCE
POWER OUTPUT PEP vs POWER INPUT
COLLECTOR EFFICIENCY vs POWER OUTPUT
PEP
2/6
TYPICA L P ERFOR MA NCE ( cont’ d)
INTERMODULATION DISTORTION vs POWER OUTPUT PEP
SD1730 (TH560)
IMPEDA NC E DATA
FREQ. ZIN(Ω)Z
30 MHz 1.15 + j 0.41 1.25 + j 1.92
POWER GAIN vs POWER OUTPUT
(Ω)
CL
3/6
SD1730 (TH560)
TEST CIRCUIT
C1 : 180pF
C2, C4, C6,
C8, C10, C12
C14, C16 : Arco 428
C3 : 820pF
C5, C13 : 680pF
C7, C11 : 1.2nF
C9 : 1.5nF
C17, C22 : 470µF, 40V
C18 : 10nF
C19, C21
C23 : 1nF
C20, C24 : 100nF, 63V
L1 : 3 Turns, Diameter 10mm, 1.3mm Wire, Length 10mm
L2, L5 : Hair Pin Copper foil 40 x 5mm, 0.2mm Thick
L3, L4 : Hair Pin Copper Foil 10 x 5mm, 0.2mm Thick
L6 : 5 Turns, Diameter 10mm, 1.3mm Wire, Length 15mm
L7 : 3 Turns, Diameter 10mm, 1.3mm Wire, Length 25mm
L8 : Choke
L9 : Choke
L10 : Choke
4/6
BIAS CIRCUIT
SD1730 (TH560)
5/6
SD1730 (TH560)
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0174 rev. A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
6/6
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