.OPTIMIZED FOR SSB
.30 MHz
.28 VOLTS
.IMD −30 dB
. COMMON EMITTER
.GOLD METALLIZATION
.P
OUT
130 W PEP WIT H 12 dB GAIN
=
SD1729 (TH416)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICA TIONS
.500 4LF L (M174)
epoxy sealed
ORDER CODE
SD1729
PIN CONNECTION
BRANDING
TH416
DESC RIPTION
The SD1729 is a Class AB 28 V epitaxial silicon
NPN planar transistor designed primarily for SSB
communications. This device utilizes emitter ballasting to achieve ext r eme r uggedness under
severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 70 V
Collector-Emitter Voltage 35 V
Emitter-Base Voltage 4.0 V
Device Current 12 A
Power Dissipation 175 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.0 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/4
SD1729 (TH416)
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CES
CEO
EBO
FE
IC= 50 mA VBE= 0V 70 — — V
IC= 100 mA IB= 0mA 35 — — V
IE= 20 mA IC= 0 mA 4.0 — — V
VCE= 35 V IE= 0mA — — 20 mA
VCE= 5V IC=7A 18 — 50 —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
P
IMD* P
η
cP
C
OB
Note: * f
f = 30 MHz VCE= 28 V ICQ= 150 mA 130 — — W
P
= 130 W PEP VCE= 28 V ICQ= 150 mA 12 — — dB
OUT
= 130 W PEP VCE= 28 V ICQ= 150 mA — — −30 dBc
OUT
= 130 W PEP VCE= 28 V ICQ= 150 mA 37 — — %
OUT
f = 1 MHz VCB= 28 V — 220 — pF
30.00 MHz, f
=
1
= 30.001 MHz
2
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
SAFE OPERATING AREA
2/4
TYPICAL PERFO RM AN CE (cont ’d )
INTERMODULATION DISTORTION vs
SD1729 (TH416)
POWER OUTPUT
TEST CIRCUIT
C1 : 20 - 120pF
C2 : 50 - 300pF
C3, C4 : 3.9nF
C5 : 100nF
C6 : 2.2µF
C7 : 2 x 180pF in Parallel
C8 : 3 x 56pF and 33pF in Parallel
C9 : 4 x 56pF and 68pF in Parallel
C10, C11 : 360pF
L1 : 88nF
L2 : 22µH Choke Coil
L3, L5 : 80nF
L4 : Ferroxcube Choke Coil
R1 : 0.55
R2 : 27
R3 : 4.7
Ω
Ω
Ω
3/4
SD1729 (TH416)
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0174
Information furnished is believed tobe accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of suchinformation nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpress
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
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Singapore - Spain - Sweden - Switzerland - Taiwan -Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
4/4
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