SGS Thomson Microelectronics SD1729 Datasheet
.OPTIMIZED FOR SSB
.30 MHz
.28 VOLTS
.IMD −30 dB
. COMMON EMITTER
.GOLD METALLIZATION
.P
OUT
130 W PEP WIT H 12 dB GAIN
=
SD1729 (TH416)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICA TIONS
.500 4LF L (M174)
epoxy sealed
ORDER CODE
SD1729
PIN CONNECTION
BRANDING
TH416
DESC RIPTION
The SD1729 is a Class AB 28 V epitaxial silicon
NPN planar transistor designed primarily for SSB
communications. This device utilizes emitter ballasting to achieve ext r eme r uggedness under
severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 70 V
Collector-Emitter Voltage 35 V
Emitter-Base Voltage 4.0 V
Device Current 12 A
Power Dissipation 175 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.0 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/4
SD1729 (TH416)
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CES
CEO
EBO
FE
IC= 50 mA VBE= 0V 70 — — V
IC= 100 mA IB= 0mA 35 — — V
IE= 20 mA IC= 0 mA 4.0 — — V
VCE= 35 V IE= 0mA — — 20 mA
VCE= 5V IC=7A 18 — 50 —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
P
IMD* P
η
cP
C
OB
Note: * f
f = 30 MHz VCE= 28 V ICQ= 150 mA 130 — — W
P
= 130 W PEP VCE= 28 V ICQ= 150 mA 12 — — dB
OUT
= 130 W PEP VCE= 28 V ICQ= 150 mA — — −30 dBc
OUT
= 130 W PEP VCE= 28 V ICQ= 150 mA 37 — — %
OUT
f = 1 MHz VCB= 28 V — 220 — pF
30.00 MHz, f
=
1
= 30.001 MHz
2
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
SAFE OPERATING AREA
2/4
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