SGS Thomson Microelectronics SD1728 Datasheet
.OPTIMIZED FOR SSB
.30 MHz
.50 VOLTS
.IMD − 30 dB
. GOLD METALLIZATION
.COMMON EMITTER
.P
OUT
250 W PEP W ITH 14.5 dB GAIN
=
SD1728 (TH430)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICA TIONS
.550 4LF L (M177)
epoxy sealed
ORDER CODE
SD1728
PIN CONNECTION
BRANDING
TH430
DESC RIPTION
The SD1728 is a 50 V epitaxial silicon NPN planar
transistor designed primarily for SSB and VHF
communications. This device utilizes emitter ballasting for improved ruggedness and reliability.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 110 V
Collector-Emitter Voltage 55 V
Emitter-Base Voltage 4.0 V
Device Current 40 A
Power Dissipation 330 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.4 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/9
SD1728 (TH430)
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CESIC
BV
CEOIC
BV
EBOIE
I
CEO
I
CES
h
FE
= 200mA VBE= 0V 110 — — V
= 200mA IB= 0mA 55 — — V
= 20mA IC= 0mA 4.0 — — V
VCE= 30V IE= 0mA — — 10 mA
VCE= 60V IE= 0mA — — 10 mA
VCE= 6V IC= 10A 15 — 45 —
DYNAMIC
Symbol Test C ond itions
P
OUT
GP*P
IMD* P
η
c* P
C
OB
Note: * Two Tone Method; f
f = 30 MHz VCC= 50 V ICQ= 150 mA 250 — — W
250 W PEP VCC= 50 V ICQ= 150 mA 14.5 — — dB
=
OUT
250 W PEP VCC= 50 V ICQ= 150 mA — — −30 dBc
=
OUT
250 W PEP VCC= 50 V ICQ= 150 mA 37 — — %
=
OUT
f = 1 MHz VCB= 50 V — — 360 pF
30.00 MHz; f
=
In Cl ass C: GPMi n. 13. 5 dB, Effici ency 65%@ 30MHz
GPMi n. 10 d B, Efficiency 57%@ 70MH z
1
30.001 MHz
=
2
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/9
TYPICA L PERFO R MA NCE
SD1728 (TH430)
CLASS AB
POWER OUTPUT PEP vs POWER INPUT
COLLECTOR EFFICIENCY vs
POWER OUTPUT PEP
INTERMODULATION DISTORTION vs POWER OUTPUT PEP
3/9
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