SGS Thomson Microelectronics SD1726 Datasheet
.OPTIMIZED FOR SSB
.30 MHz
.50 VOLTS
.IMD −30 dB
. COMMON EMITTER
.GOLD METALLIZATION
.P
OUT
150 W PEP MIN . WIT H 14 dB GAIN
=
SD1726 (THA15)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICA TIONS
.500 4LF L (M174)
epoxy sealed
ORDER CODE
SD1726
PIN CONNECTION
BRANDING
THA15
DESC RIPTION
The SD1726 is a 50 V epitaxial silicon NPN planar
transistor designed primarily for SSB communications. This device utilizes emitter ballasting to
achieve extreme ruggedness under severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 110 V
Collector-Emitter Voltage 55 V
Emitter-Base Voltage 4.0 V
Device Current 10 A
Power Dissipation 233 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.75 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/7
SD1726 (THA15)
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
BV
I
I
CBO
CES
CEO
EBO
CEO
CES
h
FE
IC= 100mA IE= 0mA 110 — — V
IC= 100m A VBE= 0V 110 — — V
IC= 100mA IB= 0mA 55 — — V
IE= 1 0mA IC= 0 mA 4.0 — — V
VCE= 30V IE= 0mA — — 5 mA
VCE= 60V IE= 0mA — — 5 mA
VCE= 6V IC= 1 .4A 18 — 43.5 —
DYNAMIC
Symbol Test Conditions
P
OUT
GP*P
IMD* P
η
c* P
C
OB
Note: The SD 1726 is also usable in Class A at 40 V. Typical performance is:
f = 30 MHz VCE= 50 V ICQ= 100mA 150 — — W
= 150 WPEP VCE= 50 V ICQ= 100mA 14 — — dB
OUT
= 150 WPEP VCE= 50 V ICQ= 100mA — — −30 dBc
OUT
= 150 WPEP VCE= 50 V ICQ= 100mA 37 — — %
OUT
f = 1 MHz VCB= 50 V — — 220 pF
P
*f
30 W PEP, G
=
OUT
=30.00 MHz ; f2= 30.001 MHz
1
14 dB, IMD
=
P
= −
40dBc
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/7
TYPICAL PERFORMANCE
INTERMODULATION DISTORTION vs POWER
SD1726 (THA 15)
OUT PUT PEP
POWER OUTPUT PEP vs POWER INPUT
COLLECTOR EF FIC IENC Y vs POWER OUTPUT PEP
3/7
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