.OPTIMIZED FOR SSB
.30 MHz
.50 VOLTS
.IMD −30 dB
. COMMON EMITTER
.GOLD METALLIZATION
.P
OUT
150 W PEP MIN . WIT H 14 dB GAIN
=
SD1726 (THA15)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICA TIONS
.500 4LF L (M174)
epoxy sealed
ORDER CODE
SD1726
PIN CONNECTION
BRANDING
THA15
DESC RIPTION
The SD1726 is a 50 V epitaxial silicon NPN planar
transistor designed primarily for SSB communications. This device utilizes emitter ballasting to
achieve extreme ruggedness under severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 110 V
Collector-Emitter Voltage 55 V
Emitter-Base Voltage 4.0 V
Device Current 10 A
Power Dissipation 233 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.75 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/7
SD1726 (THA15)
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
BV
I
I
CBO
CES
CEO
EBO
CEO
CES
h
FE
IC= 100mA IE= 0mA 110 — — V
IC= 100m A VBE= 0V 110 — — V
IC= 100mA IB= 0mA 55 — — V
IE= 1 0mA IC= 0 mA 4.0 — — V
VCE= 30V IE= 0mA — — 5 mA
VCE= 60V IE= 0mA — — 5 mA
VCE= 6V IC= 1 .4A 18 — 43.5 —
DYNAMIC
Symbol Test Conditions
P
OUT
GP*P
IMD* P
η
c* P
C
OB
Note: The SD 1726 is also usable in Class A at 40 V. Typical performance is:
f = 30 MHz VCE= 50 V ICQ= 100mA 150 — — W
= 150 WPEP VCE= 50 V ICQ= 100mA 14 — — dB
OUT
= 150 WPEP VCE= 50 V ICQ= 100mA — — −30 dBc
OUT
= 150 WPEP VCE= 50 V ICQ= 100mA 37 — — %
OUT
f = 1 MHz VCB= 50 V — — 220 pF
P
*f
30 W PEP, G
=
OUT
=30.00 MHz ; f2= 30.001 MHz
1
14 dB, IMD
=
P
= −
40dBc
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/7
TYPICAL PERFORMANCE
INTERMODULATION DISTORTION vs POWER
SD1726 (THA 15)
OUT PUT PEP
POWER OUTPUT PEP vs POWER INPUT
COLLECTOR EF FIC IENC Y vs POWER OUTPUT PEP
3/7
SD1726 (THA15)
TYPICAL PERFO RM AN CE (cont ’d )
POWER G AIN vs FREQUENCY
POWER GAIN vs POWER O U TPUT PEP
4/7
SAFE OPERATING AREA
IMPEDA NCE DATA
SD1726 (THA 15)
TYPICAL INPUT IMPEDANCE
BIAS CRCUIT
5/7
SD1726 (THA15)
TEST CIRCUI T - CLASS AB - 30 MHz
C1 : Arco 427
C2 : Arco 4611
C3 : Arco 4615
C4 : 220pF
C5, C6 : Arco 4215
C7 : Arco 426
C8, C12 : 100nF 63V
C9, C11
C15 : 1nF
C10 : 470µF 40V
C13 : 220µF 63V
C14 : 10nF
MOUN TI NG CI RCU I T - CLASS AB - 30M H z
L1 : 5 Turns Diameter 8mm, 1.3mm Wire, Length 15mm
L2 : Hair Pin Copper Foil 20 x 5mm, 0.2mm Thick
L3 : 1 Turn Diameter 10mm, 1.3mm Wire, Length 8mm
L4 : 6 Turns Diameter 8mm, 1.3mm Wire, Length 25mm
L5 : 4 Turns Diameter 12mm, 2mm Wire, Length 25mm
L6, L7
L8 : Choke
R : 0.6
Ω
6/7
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0174
SD1726 (THA 15)
Information furnished is believed tobe accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of suchinformation nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to changewithout notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsarenotauthorizedforuseascriticalcomponentsinlifesupportdevicesorsystemswithoutexpress
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy- Japan - Korea - Malaysia - Malta -Morocco - The Netherlands-
Singapore - Spain - Sweden - Switzerland - Taiwan -Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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