SGS Thomson Microelectronics SD1726 Datasheet

.OPTIMIZED FOR SSB
.30 MHz
.50 VOLTS
.IMD −30 dB
.GOLD METALLIZATION
.P
OUT
150 W PEP MIN . WIT H 14 dB GAIN
=
SD1726 (THA15)
RF & MICROWAVE TRANSISTORS
HF SSB APPLICA TIONS
.500 4LF L (M174)
epoxy sealed
ORDER CODE
SD1726
PIN CONNECTION
BRANDING
THA15
DESC RIPTION
The SD1726 is a 50 V epitaxial silicon NPN planar transistor designed primarily for SSB communica­tions. This device utilizes emitter ballasting to achieve extreme ruggedness under severe oper­ating conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 110 V Collector-Emitter Voltage 55 V Emitter-Base Voltage 4.0 V Device Current 10 A Power Dissipation 233 W Junction Temperature +200 Storage Temperature
Junction-Case Thermal Resistance 0.75 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
°
C
°
C
November 1992
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SD1726 (THA15)
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV BV BV
I I
CBO
CES
CEO
EBO CEO CES
h
FE
IC= 100mA IE= 0mA 110 V IC= 100m A VBE= 0V 110 V IC= 100mA IB= 0mA 55 V IE= 1 0mA IC= 0 mA 4.0 V VCE= 30V IE= 0mA 5 mA VCE= 60V IE= 0mA 5 mA VCE= 6V IC= 1 .4A 18 43.5
DYNAMIC
Symbol Test Conditions
P
OUT
GP*P
IMD* P
η
c* P
C
OB
Note: The SD 1726 is also usable in Class A at 40 V. Typical performance is:
f = 30 MHz VCE= 50 V ICQ= 100mA 150 W
= 150 WPEP VCE= 50 V ICQ= 100mA 14 dB
OUT
= 150 WPEP VCE= 50 V ICQ= 100mA 30 dBc
OUT
= 150 WPEP VCE= 50 V ICQ= 100mA 37 %
OUT
f = 1 MHz VCB= 50 V 220 pF
P *f
30 W PEP, G
=
OUT
=30.00 MHz ; f2= 30.001 MHz
1
14 dB, IMD
=
P
= −
40dBc
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
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TYPICAL PERFORMANCE
INTERMODULATION DISTORTION vs POWER
SD1726 (THA 15)
OUT PUT PEP
POWER OUTPUT PEP vs POWER INPUT
COLLECTOR EF FIC IENC Y vs POWER OUTPUT PEP
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