SGS Thomson Microelectronics SD1680 Datasheet
RF & MICROWAVE TRANSISTORS
.915 - 960 MHz
.24 VOLTS
.CLASS AB PU SH PULL
. INTERNAL INPUT MATCHING
.D ESIGNED FOR HIGH POWER LINEAR
OPERATION
.HIGH SATURATED POWER CAPABILITY
.G OLD METALLIZATION FOR HIGH
RELIABILITY
.DIFFUSED EMITTER BALLAST
RESISTORS
. CO MMON EMITTER CONFIGURATION
.P
OUT
100 W MIN. WITH 7.0 dB GAIN
=
SD1680
800/900 MHz APPLICA TIONS
2 x .437 x .450 2L FL (M175)
epoxysealed
ORDER CODE
SD1680
PIN CONNECTION
BRANDING
SD1680
DESC RIPTION
The SD1680 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
cellular base station applications.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DATA
R
TH(j-c)
Collector-Base Voltage 60 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 3.0 V
Device Current 25 A
Power Dissipation 310 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.55 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
55 to +150
−
°
C
°
C
November 1992
1/7
SD1680
ELECTRICAL SPECIFICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CES
h
FE
TestedPer Side
IC= 100mA IE= 0mA 60 — — V
IC= 100mA IB= 0mA 30 — — V
IE= 50mA IC= 0mA 3.0 — — V
VCE= 28V IE= 0mA — — 10 mA
VCE= 5V IC= 3A 15 — 70 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test Cond iti ons
P
*f=900 MHz VCE= 24 V ICQ= 2 x 300 mA 120 — — W
OUT
Value
Min. Typ. Max.
GP*f=900 MHz VCE= 24 V ICQ= 2 x 300 mA 7.0 — — dB
IMD** f = 900 MHz VCE= 24 V ICQ= 2x300mA — −32 — dBc
η
cf=900 MHz VCE= 24 V ICQ= 2x300mA 45 — — %
C
OB
Note: * @ 1 dB Compression
f = 1 MHz VCB= 28 V — — 100 pF
** P
100W PEP,∆F=400KH z (2 t ones)
=
OUT
Unit
Unit
TYPICA L PERFOR MA NCE
POWER OUTPUT vs POWER IN PU T
THERMAL RESISTANCE vs CASE
TEMPERATURE
2/7
TYPICA L PERFOR MA NCE ( co nt’ d)
SD1680
COLLECTOR EFFICIENCY vs FREQUENCY
INTERMODULATION DISTORTION vs
POWER OUTPUT
BROADBAND POWER GAIN vs
FREQUENCY
3/7
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