The SD1660 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
cellular base station applications.
ABSOLUTE MAXIMUM RATINGS (T
SymbolParameterValueUni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DATA
R
TH(j-c)
Collector-Base Voltage60V
Collector-Emitter Voltage30V
Emitter-Base Voltage3.0V
Device Current25A
Power Dissipation310W
Junction Temperature+200
Storage Temperature
D1: AAY 49, Ge Diode Thermally Connected with Q3 Heatsink
D2: 1N 4005, SI Diode Thermally Connected with Q3 Heatsink
D3: 1N 4005, SI Diode Thermally Connected with RF Transistors Flange
L8, L9 : Ferrite Choke
Q3: BDX 63B
R7: 470Ω, 1/2W
R8: 100Ω, Trimpot
5/7
SD1660
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0175
6/7
SD1660
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consequences of use of such information norfor any infringement of patents or other rights of third partieswhich may results from its use. No
license isgrantedby implication or otherwise underany patent orpatent rightsof SGS-THOMSON Microelectronics.Specificationsmentioned
in this publicationare subjectto change without notice. This publication supersedes andreplaces all informationpreviously supplied.
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1994 SGS-THOMSON Microelectronics - All Rights Reserved
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