Datasheet SD1660 Datasheet (SGS Thomson Microelectronics)

RF & MICROWAVE TRANSISTORS
.860 - 900 MHz
.24 VOLTS
.CLASS AB PU SH PULL
. INTERNAL INPUT MATCHING
OPERATION
.HIGH SATURATED POWER CAPABILITY
.G OLD METALLIZATION FOR HIGH
RELIABILITY
.DIFFUSED EMITTER BALLAST
RESISTORS
. CO MMON EMITTER CONFIGURATION
.P
OUT
120 W MIN. WITH 6.0 dB GAIN
=
SD1660
800/900 MHz APPLICA TIONS
2 x .437 x .450 2L FL (M175)
epoxysealed
ORDER CODE
SD1660
PIN CONNECTION
BRANDING
SD1660
DESC RIPTION
The SD1660 is a gold metallized epitaxial silicon NPN planar transistor using diffused emitter ballast resistors for high linearity Class AB operation in cellular base station applications.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DATA
R
TH(j-c)
Collector-Base Voltage 60 V Collector-Emitter Voltage 30 V Emitter-Base Voltage 3.0 V Device Current 25 A Power Dissipation 310 W Junction Temperature +200 Storage Temperature
Junction-Case Thermal Resistance 0.55 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
55 to +150
°
C
°
C
November 1992
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SD1660
ELECTRICAL SPECIFICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBO
BV
CEO
BV
EBO
I
CES
h
FE
TestedPer Side
IC= 100mA IE= 0mA 60 V IC= 100mA IB= 0mA 30 V IE= 50mA IC= 0mA 3.0 V VCE= 28V IE= 0mA 10 mA VCE= 5V IC= 3A 15 70
Min. Typ. Max.
Value
DYNAMIC
Symbol Test Cond iti ons
P
*f=900 MHz VCE= 24 V ICQ= 2 x 400mA 120 W
OUT
Value
Min. Typ. Max.
GP*f=900 MHz VCE= 24 V ICQ= 2 x 400mA 6.0 dB
IMD** f = 900 MHz VCE= 24 V ICQ= 2 x 400mA −32 dBc
η
cf=900 MHz VCE= 24 V ICQ= 2 x 400mA 50 %
C
OB
Note: * @ 1 dB Compression
f = 1 MHz VCB= 28 V 100 pF
** P
120W PEP,∆F=600KH z (2 t ones)
=
OUT
Unit
Unit
TYPICA L PERFOR MA NCE
POWER OUTPUT vs POWER INPUT
THERMAL RESISTANCE vs CASE
TEMPERATURE
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TYPICA L PERFOR MA NCE ( co nt’ d)
SD1660
COLLECTOR EFFICIENCY vs FREQUENCY
INTERMODULATION DISTORTION vs
POWER OUTPUT
BROADBAND POWER GAIN vs
FREQUENCY
PHOTOMASTER OF TEST CIRCUIT
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SD1660
TEST CIRCUIT
B1, B2 : Coaxial Cable 25.43mm C1, C2 : 330pF, ATC 100B
C3 : .8 - 8.0pF Johanson Gigatrim C4 : 4.7 + 3.9pF, ATC 100B C5 : 3.9 + 1.7pF, ATC 100B+ .8 - 8.0pF
C6, C7 : 330pF, ATC 100B C8 : 120pF ATC 100B C9 : 1.5nF, ATC 100B C10 : 10nF + 47µF, 63V C11 : 1.5nF, ATC 100B + 10nF C12 : 470pF + 1.5nF, ATC 100B + 100mF, 63V
Substrate: Teflon Glass, Er=2.55, 30Mils Thick
Johanson Gigatrim
L1, L18 : Printed Line 50 L2, L17 : Printed Line 26.710mm L3, L16 : Printed Line 60Ω10.5mm L4, L15 : Printed Line 50Ω43mm L5 : Printed Line 25Ω13.5mm L6 : Printed Line 21Ω15mm L7 : Printed Line 10.5Ω12.5mm L8 : Printed Line 8Ω7.5mm L9, L10 : Printed Line 50Ω10mm L11 : Printed Line 9.5Ω10.5mm L12 : Printed Line 11Ω 14.5mm L13 : Printed Line 15.58.5mm L14 : Printed Line 19Ω3.5mm L19 : 2 Turns, #16 AWG L20 : 2 Turns, #16 AWG L21, L22 : 12 Turns, #22 AWG
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BIAS VOLTAGE SOURCE
C15 : 10nF + 100nF + 10µF C16 : 10nF C17 : 1µF C18 : 1.2nF + 27nF + 10µF
SD1660
D1 : AAY 49, Ge Diode Thermally Connected with Q3 Heatsink D2 : 1N 4005, SI Diode Thermally Connected with Q3 Heatsink D3 : 1N 4005, SI Diode Thermally Connected with RF Transistors Flange
L8, L9 : Ferrite Choke Q3 : BDX 63B R7 : 470Ω, 1/2W
R8 : 100Ω, Trimpot
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SD1660
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0175
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SD1660
Information furnished is believed to be accurateand reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information norfor any infringement of patents or other rights of third partieswhich may results from its use. No license isgrantedby implication or otherwise underany patent orpatent rightsof SGS-THOMSON Microelectronics.Specificationsmentioned in this publicationare subjectto change without notice. This publication supersedes andreplaces all informationpreviously supplied. SGS-THOMSON Microelectronicsproductsare notauthorizedforuse ascritical componentsin lifesupportdevices or systemswithoutexpress written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
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