RF & MICROWAVE TRANSISTORS
CELLULAR BASE STATIO N APPLICAT IONS
.REFRACTORY/GOLD METALLIZATION
.DOUBLE STEP INPUT/OUTPUT MATCH
.850-960 MHz CLASS AB LINEAR
.COMMON EMITTER
.P
= 60 W MIN. WITH 7 dB MIN GAIN
OUT
ORDER CODE
SD1650
PIN CONNE CTI ON
SD1650
.400 6LF L (M169)
epoxy sealed
BRAN DING
SCELL500
DESCRIPT I ON
Designed for 900 MHz cellular radio base station
applications, the SD1650 exhibits high collector
efficiency with excellent thermal characteristics.
Double-section internal input/output matching result in terminal impedance levels easily handled
by the circuit designer.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
*Appliesonly to ratedRF amplifieroperation
Collector-Base Voltage 60 V
Collector-Emitter Voltage 28 V
Emitter-Base Voltage 4.0 V
Device Current 10 A
Power Dissipation (+25°C) 175 W
Junction Temperature +200
Storage Temperature − 65 to +150
Junction-Case Thermal Resistance 1.5 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
°
C
°
C
August 1992
1/5
SD1650
ELEC TRIC AL SPECIFIC A TI ON S (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
EBOIE
BV
CESIC
BV
CEOIC
I
CEO
h
FE
= 50mA 60 — — V
= 20mA 3.0 — — V
= 100mA 60 — — V
= 100mA 28 — — V
VCE= 24V — — 10 mA
VCE= 5V IC= 6A 20 — 200 —
DYNAMIC
Symbol Test Conditions
P
OUT
η
cf=900 MHz P
G
VSWR f = 900 MHz P
f = 900 MHz P
f = 900 MHz P
P
12 W I
=
IN
12 W I
=
IN
12 W I
=
IN
12 W 3:1 — — —
IN =
Value
Min. Typ. Max.
Value
Min. Typ. Max.
300 mA 60 — — W
=
CQ
300 mA 45 — — %
=
CQ
300 mA 7 — — dB
=
CQ
Unit
Unit
2/5
TYPICA L PERFO R MA NCE
SD1650
BROADBAND POWER OUTPUT
vs POWERINPUT
vs POWER INPUT
90
850 MHz
80
P
O
W
70
E
R
60
O
U
50
T
P
40
U
T
30
W
A
20
T
T
S
10
0
012345678910111213
POWER INPUT(WATTS)POWER INPUT(WATTS)
900 MHz
960 MHz
BROADBAND POWER OUTPUT
vs FREQUENCY
vs FREQUENCY
100
P
O
90
W
E
R
80
O
U
T
70
P
U
T
60
W
A
T
50
T
S
40
825 850 875 900 925 950 975 1000
FREQUENCY (MHz)FREQUENCY (MHz)
P
I
IN
CQ
12 Watts
=
300 mA
=
BROADBAND POWER GAIN
vs FREQUENCY
vs FREQUENCY
10
9.5
P
O
W
9
E
R
8.5
G
A
I
N
8
d
B
7.5
7
825 850 875 900 925 950 975 1000
P
= 60 Watts
OUT
I
300 mA
=
CQ
FREQUENCY (MHz)FREQUENCY (MHz)
BROADBAND EFFICIENCY
vs FREQUENCY
vs FREQUENCY
60
55
E
F
50
F
I
C
I
45
E
N
C
Y
40
%
35
30
825 850 875 900 925 950 975 1000
P
I
OUT
CQ
60 Watts
=
300 mA
=
FREQUENCY (MHz)FREQUENCY (MHz)
3/5
SD1650
IMPEDA NCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
TYPICAL COLLECTOR
LOAD IMPEDANCE
TEST CIRCUIT
FREQ. ZIN(Ω)Z
CL
(Ω)
850 MHz 2.4 + j 5.2 4.0 − j1.3
870 MHz 2.6 + j 5.4 3.9 − j2.3
900 MHz 3.2 + j 6.3 3.6 − j2.6
930 MHz 4.1 + j 6.0 3.4 − j2.4
Z
CL
960 MHz 4.7 + j 5.6 3.0 − j3.0
4/5
C1,C2 : 220 pF Chip Capacitor ATC Size B
C3 : 10 Microfarad Electrolytic Capacitor
C4,C5 : 220 pF Chip Capacitor ATC Size B
C6,C7 : 1 - 4 pF Johanson Variable Capacitor
D1,D2 : 1N3064 Diode or Equiv
L1,L2 : 5 Turn 1/4” Dia. 16 AWG Coil
Q1 : SD1438-02 or Equiv.
R1 : 5KΩPotentiometer
R2 : 100Ω1/4 Watt Resistor
Er=10.2 H=.025in.
PACKAGE MECHANICAL DATA
Ref. Dwg. No.: 12-0169
SD1650
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability forthe
consequences of useof such information nor for any infringementof patents or other rights of third partieswhich mayresults from its use. No
license isgranted by implicationor otherwiseunderany patent orpatent rights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication aresubjectto changewithout notice. This publication supersedes andreplacesall information previously supplied.
SGS-THOMSON Microelectronicsproducts arenotauthorized foruse ascritical componentsinlifesupport devicesor systemswithout express
written approvalofSGS-THOMSONMicroelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil - France- Germany- HongKong - Italy- Japan - Korea - Malaysia - Malta - Morocco -The Netherlands-
Singapore - Spain - Sweden- Switzerland-Taiwan - Thailand - United Kingdom -U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
5/5
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