SGS Thomson Microelectronics SD1650 Datasheet
RF & MICROWAVE TRANSISTORS
CELLULAR BASE STATIO N APPLICAT IONS
.REFRACTORY/GOLD METALLIZATION
.DOUBLE STEP INPUT/OUTPUT MATCH
.850-960 MHz CLASS AB LINEAR
.COMMON EMITTER
.P
= 60 W MIN. WITH 7 dB MIN GAIN
OUT
ORDER CODE
SD1650
PIN CONNE CTI ON
SD1650
.400 6LF L (M169)
epoxy sealed
BRAN DING
SCELL500
DESCRIPT I ON
Designed for 900 MHz cellular radio base station
applications, the SD1650 exhibits high collector
efficiency with excellent thermal characteristics.
Double-section internal input/output matching result in terminal impedance levels easily handled
by the circuit designer.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
*Appliesonly to ratedRF amplifieroperation
Collector-Base Voltage 60 V
Collector-Emitter Voltage 28 V
Emitter-Base Voltage 4.0 V
Device Current 10 A
Power Dissipation (+25°C) 175 W
Junction Temperature +200
Storage Temperature − 65 to +150
Junction-Case Thermal Resistance 1.5 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
°
C
°
C
August 1992
1/5
SD1650
ELEC TRIC AL SPECIFIC A TI ON S (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
EBOIE
BV
CESIC
BV
CEOIC
I
CEO
h
FE
= 50mA 60 — — V
= 20mA 3.0 — — V
= 100mA 60 — — V
= 100mA 28 — — V
VCE= 24V — — 10 mA
VCE= 5V IC= 6A 20 — 200 —
DYNAMIC
Symbol Test Conditions
P
OUT
η
cf=900 MHz P
G
VSWR f = 900 MHz P
f = 900 MHz P
f = 900 MHz P
P
12 W I
=
IN
12 W I
=
IN
12 W I
=
IN
12 W 3:1 — — —
IN =
Value
Min. Typ. Max.
Value
Min. Typ. Max.
300 mA 60 — — W
=
CQ
300 mA 45 — — %
=
CQ
300 mA 7 — — dB
=
CQ
Unit
Unit
2/5
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