RF & MICROWAVE TRANSISTORS
.500 WATTS @ 250µSec PULSE WIDTH,
10% DUTY CYCLE
.REFRACTORY GOLD METALLIZATION
.EMITTER BALLASTING AND LOW
RESISTANCE FOR R ELIABI LIT Y AND
RUGGEDNESS
.INFINITE VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
. INPUT MATCHED, C OMMON BASE
CONFIGURATION
.BALANCED CONFIGURATION
SD1565
UHF PULSED APPL ICAT IONS
.400 x .500 4LF L (M102)
hermetically sealed
ORDER CODE
SD1565
PIN CONNECTION
BRANDING
SD1565
DESC RIPTION
The SD1565 is a hermetically sealed, gold metallized silicon NPNpulse power transistor mounted
in a common base balanced configuration. The
SD1565 is designed for applications requiring high
peak power and low duty cycles within the frequency range of 400 - 500 MHz.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 43.2 A
Power Dissipation 1167 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.15 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +200
−
°
C
°
C
July 19, 1994
1/6
SD1565
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CESIC
BV
EBOIE
I
CES
h
FE
= 50 mA IE= 0mA 65 — — V
= 50 mA VBE= 0V 65 — — V
= 10 mA IC= 0 mA 3.5 — — V
VCE= 30 V IE= 0mA — — 15 mA
VCE= 5V IC=5A 20 — 200 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test Cond iti ons
P
OUT
P
η
Note: Pulse Width= 250µSec, Dut y Cy cle= 10%
f = 425 MHz PIN= 54 W VCE= 40 V 500 — — W
f = 425 MHz PIN= 54 W VCE= 40 V 9.7 — — dB
G
cf=425 MHz PIN= 54 W VCE= 40 V 50 — — %
This device is sui table for use under other pulse width/duty c ycle conditions.
Please contact the factory for sp ec ific appli cati ons a ssist ance.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE (P.W. = 250µS, D .C. = 10%)
POWER OUTPUT vs POWER INPUT
POWER GAIN vs FREQUENCY
2/6
TYPICA L PERFO R MA NCE (P.W. = 250µS, D .C. = 10%)
SD1565
EFFICIENCY vs POWER INPUT
IMPEDA NC E D ATA (P.W. = 250µS, D. C. = 10%)
EFFICIENCY vs FREQUENCY
TYPICAL INPUT IMPEDANCE TYPICAL COLLECTOR LOAD
IMPEDANCE
3/6
SD1565
TYPICA L PERFO R MA NCE (P.W. = 60µ S, D.C. = 2%)
POWER OUTPUT vs POWER INPUT
POWER GAIN vs FREQUENCY
EFFICIENCY vs POWER INPUT
EFFICIENCY vs FREQUENCY
4/6
IMPEDA NCE DATA (P.W. = 60µS, D.C. = 2%)
SD1565
TYPICAL INPUT IMPEDANCE
TEST CIRCUIT
TYPICAL COLLECTOR LOAD
IMPEDANCE
C3, C5 : 8pF 50 mil square
C4, C8 : .4 - 4.5pF Johanson JMC #27273
C6 : 39pF 50mil square
C7 : 39pF Chip Capacitor
C9 : 20pF Chip Capacitor
C10 : 12pF Chip Capacitor
C12, C15 : .1µF
C13, C16 : 1000pF Chip Capacitor
C14, C17 : 1000µF
L1, L2 : 1” PC #18 Tinned Wire (mounted flat to PC Board)
L3, L4 : 2T #18 Tinned Wire, 0.25” I.D.
Baluns are 4.8” UT-141 Coax, Spaced to fit from coax
connectors to the 25 Ohm lines.
Note: 3M Epsilom 6 PC Board .030” Thick
5/6
SD1565
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0102 rev. F
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
6/6
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