SGS Thomson Microelectronics SD1565 Datasheet
RF & MICROWAVE TRANSISTORS
.500 WATTS @ 250µSec PULSE WIDTH,
10% DUTY CYCLE
.REFRACTORY GOLD METALLIZATION
.EMITTER BALLASTING AND LOW
RESISTANCE FOR R ELIABI LIT Y AND
RUGGEDNESS
.INFINITE VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
. INPUT MATCHED, C OMMON BASE
CONFIGURATION
.BALANCED CONFIGURATION
SD1565
UHF PULSED APPL ICAT IONS
.400 x .500 4LF L (M102)
hermetically sealed
ORDER CODE
SD1565
PIN CONNECTION
BRANDING
SD1565
DESC RIPTION
The SD1565 is a hermetically sealed, gold metallized silicon NPNpulse power transistor mounted
in a common base balanced configuration. The
SD1565 is designed for applications requiring high
peak power and low duty cycles within the frequency range of 400 - 500 MHz.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 43.2 A
Power Dissipation 1167 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.15 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +200
−
°
C
°
C
July 19, 1994
1/6
SD1565
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CESIC
BV
EBOIE
I
CES
h
FE
= 50 mA IE= 0mA 65 — — V
= 50 mA VBE= 0V 65 — — V
= 10 mA IC= 0 mA 3.5 — — V
VCE= 30 V IE= 0mA — — 15 mA
VCE= 5V IC=5A 20 — 200 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test Cond iti ons
P
OUT
P
η
Note: Pulse Width= 250µSec, Dut y Cy cle= 10%
f = 425 MHz PIN= 54 W VCE= 40 V 500 — — W
f = 425 MHz PIN= 54 W VCE= 40 V 9.7 — — dB
G
cf=425 MHz PIN= 54 W VCE= 40 V 50 — — %
This device is sui table for use under other pulse width/duty c ycle conditions.
Please contact the factory for sp ec ific appli cati ons a ssist ance.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE (P.W. = 250µS, D .C. = 10%)
POWER OUTPUT vs POWER INPUT
POWER GAIN vs FREQUENCY
2/6
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