SGS Thomson Microelectronics SD1563 Datasheet
RF & MICROWAVE TRANSISTORS
.350 WATTS @ 10µSEC PULSE WIDTH,
10% DUTY CYCLE
.300 W ATTS @ 250µSEC PULSE WIDTH,
10% DUTY CYCLE
.9.5 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUG GEDNESS
.INFINITE VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
SD1563
UHF PULSED APPL ICAT IONS
.400 x .400 2LF L (M106)
hermetically sealed
ORDER CODE
SD1563
PIN CONNECTION
BRANDING
SD1563
DESCRIP T ION
The SD1563 is a gold metallized silicon NPN pulse
power transistor. The SD1563 is designed for applications requiring high peak power and low duty
cycles within the frequency range of 400 - 500
MHz.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 21.6 A
Power Dissipation 875 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.2 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
September 7, 1994
1/7
SD1563
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CESIC
BV
CEOIC
BV
EBOIE
I
CES
h
FE
= 50 mA IE= 0mA 65 — — V
= 50 mA VBE= 0V 65 — — V
= 50 mA IB= 0mA 28 — — V
= 10 mA IC= 0 mA 3.5 — — V
VCE= 30 V IE= 0 mA — — 7.5 mA
VCE= 5V IC=5A 10 — 100 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test Cond iti ons
P
OUT
P
η
Note: Pulse Width= 250µSec, Dut y Cy le= 10%
f = 425 MHz PIN= 33.5 W VCE= 40 V 300 — — W
f = 425 MHz P
G
= 300 W VCE= 40 V 9.5 — — dB
OUT
cf=425 MHz PIN= 25 W VCE= 40 V 55 — — %
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
P
(W) P.W. (µSec) D.C. (%) TJ(°Cmax.) V
OUT
360 10 10 150 40
350 20 10 150 40
325 100 10 150 40
310 500 10 150 40
300 1000 10 150 40
CC
2/7
TYPICA L PERFO R MA NCE (P.W. = 120µSec)
SD1563
POWER OUTPUT vs POWER INPUT
POWER GAIN vs FREQUENCY
POWER OUTPUT vs COLLECTOR VOLTAGE
EFFICIENCY vs POWER INPUT
3/7
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