SGS Thomson Microelectronics SD1542-42 Datasheet

RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH POWER PULSED
IFF
.600 WATTS (min.) IFF 1030 or 1090 MHz
.REFRACTORY GOLD METALLIZATION
.LOW THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.30:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.INPUT MATCHED, COMMON BASE
CONFIGURATION
SD1542-42
AVIONICS APPLIC ATIONS
.400 x .500 2LFL ( M 11 2)
hermetically sealed
ORDER CODE
SD1542-42
PIN CONNECTIO N
BRAN DI N G
SD1542-42
DESCRIP T I ON
The SD1542-42 is a hermetically sealed, gold met­allized, silicon NPNpower transistor. The SD1542­42 is designed for applications requiringhigh peak power and low duty cycles such as IFF. The SD1542-42 is packaged in a hermetic metal/ce­ramic package with internal input matching, re­sulting in improved broadband performance and low thermal resistance.
ABSOLUT E MAXIMUM RATINGS (T
Symbol Parameter Valu e Unit
V
CC
I
C
P
DISS
T
J
T
STG
THERMAL DATA
Collector-SupplyVoltage* 55 V Device Current* (TC≤ 100°C)
Power Dissipation* 1670 W Junction Temperature +200 Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
45 A
65 to +200
°
C
°
C
R
TH(j-c)
* Appliesonly torated RFoperation.
June 14, 1995 1/4
Junction-CaseThermal Resistance* 0.06 °
C/W
SD1542-42
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol T est Condi tions
BV
CBO I
BV
CER I
BV
EBO I
I
CES V
h
FE
= 25 mA IE= 0mA
C
= 25 mA RBE= 10
C
= 10 mA IC= 0mA
E
= 50 V VBE= 0V
CE
VCE= 5V IC=2A
DYNAMIC
Symbol Test Conditi ons
P
OUT f = 1090 MHz P
η
G
Note: Pulse Width= 10µSec, Dut y Cycle= 1%
f = 1090 MHz PIN= 150 W VCC= 50 V
C
P f = 1090 MHz P
= 150 W VCC= 50 V
IN
= 150 W VCC= 50 V
IN
Value
Min. Typ. Max.
Unit
65 V 65 V
3.5 V — 60 mA
10 250
Value
Min. Typ. Max.
Unit
600 680 W
35 40 %
6.0 6.6 dB
TYPICAL PERFORM ANCE
POWER OUTPUT vs POWER INPUT
900 800 700 600 500 400
POWE ROUTPUT(Watts)
300 200
0 60 80 100 120 140 160 180
POWERINPUT(W atts)
A - T e s tCircu i t B -1030M HzCircuit
Vcc =50V Tc =25°C PW=10 µ sec DC= 1%
POWER OUTPUT vs FREQUENCY
80 0
A B
70 0 60 0 50 0 40 0 30 0
POWE ROUTPUT(Watts)
20 0 10 0
T est C ircuit turned narrowband
1030 1050 1070 1090 11 10
FRE Q U EN C Y(M Hz )
PIN=150W
CC=50V
V
C=25°C
T PW=10 µ sec DC= 1%
June 14, 1995 2/4
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