RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH POWER PULSED
IFF
.600 WATTS (min.) IFF 1030 or 1090 MHz
.REFRACTORY GOLD METALLIZATION
.6.0 dB MIN. GAIN
.LOW THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.30:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.INPUT MATCHED, COMMON BASE
CONFIGURATION
SD1542-42
AVIONICS APPLIC ATIONS
.400 x .500 2LFL ( M 11 2)
hermetically sealed
ORDER CODE
SD1542-42
PIN CONNECTIO N
BRAN DI N G
SD1542-42
DESCRIP T I ON
The SD1542-42 is a hermetically sealed, gold metallized, silicon NPNpower transistor. The SD154242 is designed for applications requiringhigh peak
power and low duty cycles such as IFF. The
SD1542-42 is packaged in a hermetic metal/ceramic package with internal input matching, resulting in improved broadband performance and
low thermal resistance.
ABSOLUT E MAXIMUM RATINGS (T
Symbol Parameter Valu e Unit
V
CC
I
C
P
DISS
T
J
T
STG
THERMAL DATA
Collector-SupplyVoltage* 55 V
Device Current* (TC≤ 100°C)
Power Dissipation* 1670 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
45 A
65 to +200
−
°
C
°
C
R
TH(j-c)
* Appliesonly torated RFoperation.
June 14, 1995 1/4
Junction-CaseThermal Resistance* 0.06 °
C/W
SD1542-42
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol T est Condi tions
BV
CBO I
BV
CER I
BV
EBO I
I
CES V
h
FE
= 25 mA IE= 0mA
C
= 25 mA RBE= 10 Ω
C
= 10 mA IC= 0mA
E
= 50 V VBE= 0V
CE
VCE= 5V IC=2A
DYNAMIC
Symbol Test Conditi ons
P
OUT f = 1090 MHz P
η
G
Note: Pulse Width= 10µSec, Dut y Cycle= 1%
f = 1090 MHz PIN= 150 W VCC= 50 V
C
P f = 1090 MHz P
= 150 W VCC= 50 V
IN
= 150 W VCC= 50 V
IN
Value
Min. Typ. Max.
Unit
65 — — V
65 — — V
3.5 — — V
— — 60 mA
10 — 250 —
Value
Min. Typ. Max.
Unit
600 680 — W
35 40 — %
6.0 6.6 — dB
TYPICAL PERFORM ANCE
POWER OUTPUT vs POWER INPUT
900
800
700
600
500
400
POWE ROUTPUT(Watts)
300
200
0 60 80 100 120 140 160 180
POWERINPUT(W atts)
A - T e s tCircu i t
B -1030M HzCircuit
Vcc =50V
Tc =25°C
PW=10 µ sec
DC= 1%
POWER OUTPUT vs FREQUENCY
80 0
A
B
70 0
60 0
50 0
40 0
30 0
POWE ROUTPUT(Watts)
20 0
10 0
T est C ircuit turned narrowband
1030 1050 1070 1090 11 10
FRE Q U EN C Y(M Hz )
PIN=150W
CC=50V
V
C=25°C
T
PW=10 µ sec
DC= 1%
June 14, 1995 2/4
TEST CIRCUIT (109 0 MHz)
Ref.: Dwg. No. C125410
SD1542-42
1030 MHz TYPICAL CIRCUIT
June 14, 1995 3/4
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0112rev. G
SD1542-42
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
June 14, 1995 4/4
Loading...