SGS Thomson Microelectronics SD1542-04 Datasheet
RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH POWER PULSED
IFF
.600 WATTS (min.) IFF 1030/1090 MHz
.REFRACTORY GOLD METALLIZATI ON
.6.0 dB MIN. GAIN
.BALLASTING AND LOW THERMAL
REISTANCE FOR RELIABILITY AND
RUGGEDNESS
.30:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.INPUT MATCHED, COMMON BASE
CONFIGURATION
.400 x .500 2LFL (M112)
ORDER CO DE
SD1542-04
PIN CONNECTION
SD1542-04
AVIONICS APPLICATIONS
hermetically sealed
BRANDING
SD1542-4
DESCRIPTION
The SD154 2-04 is a hermetically sealed, gol d m etallize d, silicon NPN power transist or. The SD154204 is designed for app lications requiring hig h peak
power and low duty cycles such as IFF. The
SD1542-04 is packaged in a hermetic metal/ceramic package with internal input matching, resulting in improved broadband performance and
low thermal reistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
V
V
P
T
CBO
CES
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 40 A
Power Dissipation 1350 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
THERMAL DATA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance 0.06 °C/W
1/5
SD1542-04
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
CBOIC
BV
EBOIE
I
CES
h
FE
= 25mA IE = 0mA 65 — — V
= 10mA IC = 0mA 3.5 — — V
VCE = 50V IE = 0mA — — 35 mA
VCE = 5V IC = 1A 5 — 200 —
DYNAMIC
Symbol Test Conditi ons
P
OUT
G
Note: Pulse Widt h = 10µSec, Duty Cyl e = 1%
f = 1090 MHz PIN = 150 W VCE = 50 V 600 — — W
f = 1090 MHz PIN = 150 W VCE = 50 V 6.0 — — dB
P
TYPICAL PERFORMANCE
Valu e
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs FREQUENCY
2/5
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