RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH POWER PULSED
IFF
.600 WATTS (min.) IFF 1030/1090 MHz
.REFRACTORY GOLD METALLIZATI ON
.6.0 dB MIN. GAIN
.BALLASTING AND LOW THERMAL
REISTANCE FOR RELIABILITY AND
RUGGEDNESS
.30:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.INPUT MATCHED, COMMON BASE
CONFIGURATION
.400 x .500 2LFL (M112)
ORDER CO DE
SD1542-04
PIN CONNECTION
SD1542-04
AVIONICS APPLICATIONS
hermetically sealed
BRANDING
SD1542-4
DESCRIPTION
The SD154 2-04 is a hermetically sealed, gol d m etallize d, silicon NPN power transist or. The SD154204 is designed for app lications requiring hig h peak
power and low duty cycles such as IFF. The
SD1542-04 is packaged in a hermetic metal/ceramic package with internal input matching, resulting in improved broadband performance and
low thermal reistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
V
V
P
T
CBO
CES
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 40 A
Power Dissipation 1350 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
THERMAL DATA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance 0.06 °C/W
1/5
SD1542-04
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
CBOIC
BV
EBOIE
I
CES
h
FE
= 25mA IE = 0mA 65 — — V
= 10mA IC = 0mA 3.5 — — V
VCE = 50V IE = 0mA — — 35 mA
VCE = 5V IC = 1A 5 — 200 —
DYNAMIC
Symbol Test Conditi ons
P
OUT
G
Note: Pulse Widt h = 10µSec, Duty Cyl e = 1%
f = 1090 MHz PIN = 150 W VCE = 50 V 600 — — W
f = 1090 MHz PIN = 150 W VCE = 50 V 6.0 — — dB
P
TYPICAL PERFORMANCE
Valu e
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs FREQUENCY
2/5
IMPEDANCE DATA
SD1542-04
TYPICAL INPUT IMPEDANCE
TYPICAL COLLECTOR LOAD
IMPEDANCE
3/5
SD1542-04
TEST CIRCUIT
C1, C2,
C3 : .8 - 4.8pF Gigatrim
C4 : 120pF Chip Capacitor
C5 : 680pF Chip Capacitor
C6 : 1000µF 63Vdc Electrolytic
C7 : 56pF Chip Capacitor
L1 : 100mils Wide Brass Strip
L2 : #18 AWG Wire
CIRCUIT BOARD LAYOUT
Z1 : 510 mils x 20mils
Z2 : 120mils x 380mils
Z3 : 210mils x 20mils
Z4 : 270mils x 725mils
Z5 : 400mils x 720mils
Z6 : 340mils x 20 mils
Z7 : 245mils x 20 mils
4/5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0112
SD1542-04
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
5/5
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