RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH PO WER PULSED
IFF APPLICATIONS
.450 WATTS (min.) IFF 1030/1090 M Hz
. 7.0 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.BALLASTING AND LOW THERMAL
RESISTANCE FOR RELIABILIT Y AND
RUGGEDNESS
.30:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING C ON D ITION S
. INPUT MATCHED , C OMMON BASE
CONFIGURATION
SD1541-09
AVIONI CS APPLICA TIONS
.400 x .500 2LF L (M112)
hermetically sealed
ORDER CODE
SD1541-09
PIN CONNECTION
BRANDING
1541-9
DESC RIPT ION
The SD1541-09 is a gold metallized silicon NPN
planar transistor. The SD1541-09 is designedfor
applications requiring high peak and low duty cycles such as IFF. The SD1541-09 is packaged in
a metal/ceramic package with internal input matching, resulting in improved broadband performance
and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 22 A
Power Dissipation 1458 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.12 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
November 1992
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SD1541-09
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CBO
CES
EBO
FE
IC= 25mA IE= 0mA 65 — — V
IC= 50mA IB= 0mA 65 — — V
IE= 10mA IC= 0mA 3.5 — — V
VCE= 50V IE= 0mA — — 25 mA
VCE= 5V IC= .25A 5 — 200 —
DYNAMIC
Symbol Test Cond iti ons
P
OUT
G
P
Note: Pulse Width= 10µSec, Duty Cycle= 1%
f = 1090 MHz PIN= 90 W VCE= 50 V 450 — — W
f = 1090 MHz PIN= 90 W VCE= 50 V 7.0 — — dB
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT vs POWER INPUT
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