SGS Thomson Microelectronics SD1541-01 Datasheet

RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH PO WER PULSED
IFF AND DME APPLICATIONS
.400 (min.) DME 1025 - 1150 MHz
. 6.5 dB MIN. GAIN
.EMITTER BALLASTING AND L OW
THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS
.30:1 LOAD VSWR CAPABILITY AT
SPECIFIC IED OPERATING C ONDI TI ONS
. I NPUT/OUTPUT MATCHED, COMMON
BASE CONFIGUR ATION
SD1541-01
AVIONI CS APPLICA TIONS
.400 x .500 2LF L (M112)
hermetically sealed
ORDER CODE
SD1541-01
PIN CONNECTION
BRANDING
SD1541-1
DESC RIPT ION
The SD1541-01 is a hermetically sealed, gold me­tallized, silicon NPNpower transistor. TheSD1541­01 is designed for applications requiring high peak power and low duty cycles such as DME. The SD1541-01 is packaged in a hermetic metal/ce­ramic package with internal input/output matching, resulting in improved broadband performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V V V
P
T
CBO
CES
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 65 V Collector-Emitter Voltage 65 V Emitter-Base Voltage 3.5 V Device Current 22 A Power Dissipation 1458 W Junction Temperature +200 Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
°
C
°
C
THERMA L DA TA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance 0.12 °C/W
1/5
SD1541-01
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CBO CES EBO
FE
IC= 25mA IE= 0mA 65 V IC= 50mA VBE= 0V 65 V IE= 10mA IC= 0mA 3.5 V VCE= 50V IE= 0mA 25 mA VCE= 5V IC= .25A 5 200
DYNAMIC
Symbol Test Cond iti ons
P
OUT
G
P
Note: Pulse Width=10µSec, Duty Cycle=1%
f = 1025 — 1150MHz PIN= 90 W VCE= 50 V 400 W f = 1025 — 1150MHz PIN= 90 W VCE= 50 V 6.5 dB
This device is suitabl e for use under other pulse w idt h/duty cycle conditions. Please contact the f actory for specific appl icati ons a ss ist anc e.
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs FREQUENCY
2/5
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