RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH PO WER PULSED
IFF AND DME APPLICATIONS
.400 (min.) DME 1025 - 1150 MHz
. 6.5 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.EMITTER BALLASTING AND L OW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.30:1 LOAD VSWR CAPABILITY AT
SPECIFIC IED OPERATING C ONDI TI ONS
. I NPUT/OUTPUT MATCHED, COMMON
BASE CONFIGUR ATION
SD1541-01
AVIONI CS APPLICA TIONS
.400 x .500 2LF L (M112)
hermetically sealed
ORDER CODE
SD1541-01
PIN CONNECTION
BRANDING
SD1541-1
DESC RIPT ION
The SD1541-01 is a hermetically sealed, gold metallized, silicon NPNpower transistor. TheSD154101 is designed for applications requiring high peak
power and low duty cycles such as DME. The
SD1541-01 is packaged in a hermetic metal/ceramic package with internal input/output matching,
resulting in improved broadband performance and
a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
V
V
P
T
CBO
CES
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 22 A
Power Dissipation 1458 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
THERMA L DA TA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance 0.12 °C/W
1/5
SD1541-01
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CBO
CES
EBO
FE
IC= 25mA IE= 0mA 65 — — V
IC= 50mA VBE= 0V 65 — — V
IE= 10mA IC= 0mA 3.5 — — V
VCE= 50V IE= 0mA — — 25 mA
VCE= 5V IC= .25A 5 — 200 —
DYNAMIC
Symbol Test Cond iti ons
P
OUT
G
P
Note: Pulse Width=10µSec, Duty Cycle=1%
f = 1025 — 1150MHz PIN= 90 W VCE= 50 V 400 — — W
f = 1025 — 1150MHz PIN= 90 W VCE= 50 V 6.5 — — dB
This device is suitabl e for use under other pulse w idt h/duty cycle conditions.
Please contact the f actory for specific appl icati ons a ss ist anc e.
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs FREQUENCY
2/5
IMPEDA NCE DATA
SD 1541-01
1020 MHz 2.898 + j 4.1 1.382 − j 3.2
1090 MHz 2.325 + j 3.4 1.338 − j 2.8
1150 MHz 1.994 + j 2.8 1.269 − j 2.5
TEST CIRCUIT
FREQ. ZIN(Ω)Z
CL
(Ω)
All Dimensions in Inches Unless Otherwise specified
C1 : 0.4 - 2.5pF Johanson Gigatrim
C2, C3,
C4 : 0.6 - 4.5pF Johanson Gigatrim
C5 : 82pF Chip Capacitor, .055 Sq.
L1 : Loop, #18 Tinned, .36 Wide x .27 above Circuit
L2 : 4 3/4 Turns, #24 En., C.W., .075 I.D.
Z1 : 50Ω(.02 Wide)
Z2 : .250 x .120
Z3 : 50Ω.020 x .330; C1 tapped .15 from Load
Z4 : .145 x .920
Z5 : .325 x .180
Z6 : .730 x .315
Z7 : .710 x .425 with .140 x .150 cutout
Z8 : .35 x .780; C4 Tapped .36 from Cen
Z9 : 50
C1, C4 : Cold End Terminated Through Eyelet.
Ω
3/5
SD1541-01
PC BOARD LAYOUT
4/5
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0112
SD 1541-01
Information furnished isbelieved to be accurate and reliable.However, SGS-THOMSON Microelectronics assumesno responsability for the
consequences of useof such information nor for any infringementof patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patentor patent rights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsin life supportdevices orsystems without express
written approval of SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
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SGS-THOMSON Microelectronics GROUP OF COMPANIES
5/5
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