RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH PO WER PULSED
IFF AND DME APPLICATIONS
.400 (min.) DME 1025 - 1150 MHz
. 6.5 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.EMITTER BALLASTING AND L OW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.30:1 LOAD VSWR CAPABILITY AT
SPECIFIC IED OPERATING C ONDI TI ONS
. I NPUT/OUTPUT MATCHED, COMMON
BASE CONFIGUR ATION
SD1541-01
AVIONI CS APPLICA TIONS
.400 x .500 2LF L (M112)
hermetically sealed
ORDER CODE
SD1541-01
PIN CONNECTION
BRANDING
SD1541-1
DESC RIPT ION
The SD1541-01 is a hermetically sealed, gold metallized, silicon NPNpower transistor. TheSD154101 is designed for applications requiring high peak
power and low duty cycles such as DME. The
SD1541-01 is packaged in a hermetic metal/ceramic package with internal input/output matching,
resulting in improved broadband performance and
a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
V
V
P
T
CBO
CES
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 22 A
Power Dissipation 1458 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
THERMA L DA TA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance 0.12 °C/W
1/5
SD1541-01
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CBO
CES
EBO
FE
IC= 25mA IE= 0mA 65 — — V
IC= 50mA VBE= 0V 65 — — V
IE= 10mA IC= 0mA 3.5 — — V
VCE= 50V IE= 0mA — — 25 mA
VCE= 5V IC= .25A 5 — 200 —
DYNAMIC
Symbol Test Cond iti ons
P
OUT
G
P
Note: Pulse Width=10µSec, Duty Cycle=1%
f = 1025 — 1150MHz PIN= 90 W VCE= 50 V 400 — — W
f = 1025 — 1150MHz PIN= 90 W VCE= 50 V 6.5 — — dB
This device is suitabl e for use under other pulse w idt h/duty cycle conditions.
Please contact the f actory for specific appl icati ons a ss ist anc e.
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs FREQUENCY
2/5