RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH PO WER PULSED
IFF, DME, TACAN APPLICATIONS
.350 WATTS (typ.) IFF 1030 - 1090 MHz
.300 WATTS (min.) DME 1025 - 1150 M Hz
. 290 WATTS (typ.) TACAN 960 - 1215 MHz
.6.3 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.20:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING C ON D I TI ONS
. I NPUT/OUTPUT MATCHED, COMMON
BASE CONFIGURATION
SD1540-08
AVIONI CS APPLICA TIONS
.400 x .400. 2LF L (M138 )
hermetically sealed
ORDER CODE
SD1540-08
PIN CONNECTION
BRANDING
SD1540-8
DESC RIPTIO N
The SD1540-08 is a gold metallized silicon, NPN
power transistordesignedfor applications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1540 is packaged
in a metal/ceramic package with internal input/output matching resulting in improved broadband performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 22 A
Power Dissipation 875 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.20 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
November 1992
1/5
SD1540-08
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CBO
CES
EBO
FE
IC= 10mA IE= 0mA 65 — — V
IC= 25mA VBE= 0V 65 — — V
IE= 5mA IC= 0mA 3.5 — — V
VCE= 50V IE= 0mA — — 25 mA
VCE= 5V IC= 1A 10 — — —
DYNAMIC
Symbol Test Conditi ons
P
OUT
G
P
η
C
Note: Pulse Width
f = 1025 — 1150MHz PIN= 70 W VCE= 50 V 300 — — W
f = 1025 — 1150MHz PIN= 70 W VCE= 50 V 6.3 — — dB
f = 1025 — 1150MHz PIN= 70 W VCE= 50 V 35 — — %
10µSec, Duty Cycle = 1%
=
This device i s suitable for use under othe r puls e width/du ty cycle conditions .
Please cont ac t the factory for specific applications a ss istance.
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT vs POWER INPUT POWER OUTPUT vs FREQUENCY
2/5