SGS Thomson Microelectronics SD1540 Datasheet
RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH POWER PU LSED
IFF, DME, TACAN APPLICATIONS
.350 WATTS (typ.) IFF 1030 - 1090 MHz
.300 W ATTS (min.) DME 1025 - 1150 MHz
. 2900 WATTS (typ.) TACAN 960 - 1215 MHz
.6.3 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.EMITT ER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.30:1 LOAD VSWR CAPABILITY AT
SPECIFIED O PERATIN G COND ITIONS
. I NPUT/OUTPUT MATCHED, COMMON
BASE CONFIGURATI ON
SD1540
AVIONI CS APPLICA TIONS
.400 SQ. 2LF L (M103)
epoxy sealed
ORDER CODE
SD1540
PIN CONNECTION
BRANDING
SD1540
DESC RIPTION
The SD1540 is a gold metallized silicon, NPN
power transistordesignedfor applications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1540 is packaged
in a metal/ceramic package with internal input/output matching resulting in improved broadband performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DATA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 22 A
Power Dissipation 875 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.20 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
November 1992
1/5
SD1540
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
I
CES
CBO
EBO
IC= 10m A IE= 0mA 65 — — V
IE= 5mA IC= 0mA 3.5 — — V
VCE= 50V IE= 0mA — — 25 mA
DYNAMIC
Symbol Test C ond itions
P
OUT
G
P
Note: Pulse Width=10µSec, Duty Cycle=1%
f = 1025 — 1150MHz PIN= 70 W VCE= 50 V 300 — — W
f = 1025 — 1150MHz PIN= 70 W VCE= 50 V 6.3 — — dB
This device is suitabl e for use under other pulse w idt h/duty cycle c onditions.
Please contact the f actory f or specifi c a ppli c ati ons asi stance .
TYPICA L P ERFO R MA NCE
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/5
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