SGS Thomson Microelectronics SD1538-08 Datasheet
RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH PO WER PULSE
IFF, DME, AND TACAN APPLICATIONS
. 2 00 W (t y p.) IFF 1 030 - 1090 MHz
. 150W(min.)DME1025-1150MHz
.140 W (typ. ) TACAN 960 - 1215 MHz
. 7.8 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.BALLASTING AND LOW THERMAL
RESISTANCE FOR RELIABILIT Y AND
RUGGEDNESS
.30:1 LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDI TI ONS
. INPUT AND OUTPUT MATCHED,
COMMON BASE CONFIGURATION
SD1538-08
AVIONI CS APPLICA TIONS
.400 x .400 2LF L (M138)
hermetically sealed
ORDER CODE
SD1538-08
PIN CONNECTION
BRANDING
1538-8
DESC RIPT ION
The SD1538-08 is a gold metallized, silicon NPN
power transistor. The SD1538-08 is designed for
applications requiring high peak power and low
duty cycles such as IFF, DME and TACAN. The
SD1538-08 is packaged in a metal/ceramic package with internal input/output matching, resulting
in improved broadband performance and low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
V
V
P
T
CBO
CES
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 11 A
Power Dissipation 583 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
THERMA L DA TA
R
TH(j-c)
September 6, 1994
Junction-Case Thermal Resistance 0.30 °C/W
1/5
SD1538-08
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CESIC
BV
EBOIE
I
CES
h
FE
= 10mA IE= 0mA 65 — — V
= 25mA VBE= 0V 65 — — V
= 5mA IC= 0mA 3.5 — — V
VCE= 50V IE= 0mA — — 10 mA
VCE= 5V IC= 300mA 5 — — —
DYNAMIC
Symbol Test Cond iti ons
P
OUT
P
Note: Pulse Width= 10µSec, Duty Cyle= 1%
f = 1025 − 1150 MHz PIN= 25 W VCE= 50 V 150 — — W
f = 1025 − 1150 MHz PIN= 25 W VCE= 50 V 7.8 — — dB
G
TYPICA L PERFO R MA NCE
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs FREQUENCY
2/5
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