SGS Thomson Microelectronics SD1534-08 Datasheet
RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
.80 WATTS (typ.) IF F 1030 - 1090 MHz
. 7 5 WATTS (min.) DME 1025 - 1150 MHz
. 5 0 WATTS (ty p.) TACAN 960 - 1215 MH z
. 8.0 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.INFIN ITE LOAD VSWR C APABILITY AT
SPECIFIED O PERATIN G COND ITIONS
. INPUT M ATCH ED , CO M MON BASE
CONFIGURATION
SD1534-08
AVIONI CS APPLICA TIONS
.250 SQ. 2LF L (M105)
hermetically sealed
ORDER CODE
SD1534-08
PIN CONNECTION
BRANDING
1534-8
DESC RIPTION
The SD1534-08 is a gold metallized silicon, NPN
power transistordesigned for applications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1534-08 is packaged in the .280” input matched hermetic stripline
flange package resulting in improved broadband
performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DATA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 5.5 A
Power Dissipation 218.7 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.8 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
65 to +150
−
°
C
°
C
November 1992
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SD1534-08
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CESIC
BV
EBOIE
I
CES
h
FE
= 10mA IE= 0mA 65 — — V
= 25mA VBE= 0V 65 — — V
= 10mA IC= 0mA 3.5 — — V
VCE= 50V IE= 0mA — — 5 mA
VCE= 5V IC= 100mA 10 — 200 —
DYNAMIC
Symbol Test Cond iti ons
P
OUT
G
Note: Pulse Width=10µSec, Duty Cycle=1%
f = 1025 — 1150MHz PIN= 13.5 W VCE= 50 V 75 — — W
f = 1025 — 1150MHz PIN= 13.5 W VCE= 50 V 7.5 — — dB
P
This device is sui table f or use under other pulse widt h/duty cycle conditions .
Please contact the factory for specific applications assistance .
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
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