RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATI ONS
.80 WATTS (typ.) IFF 1030 - 1090 MHz
.75 W ATTS (min .) DME 10 25 - 1150 MHz
.50 WATTS (typ.) TACAN 960 - 1215 MHz
.8.0 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATI ON
.EMITTER BALLASTING AND L OW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.INFINITE LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.INPUT MATCHED, COMMON BASE
CONFIGURATION
ORDER CO DE
SD1534-01
PIN CONNECTION
SD1534-01
AVIONICS APPLICATIONS
.280 4LSL (M115)
epoxy sealed
BRANDING
1534-1
DESCRIPTION
The SD1534-01 is a gold metallized silicon, NPN
power tran sistor design ed for applic ations requ iring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1534-01 is packaged in the .280" input matched stripline package
resulting in im proved broadb and performance and
a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMAL DATA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 5.5 A
Power Dissipation 218.7 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.8 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
November 1992
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SD1534-01
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
CBOIC
BV
CESIC
BV
EBOIE
I
CES
h
FE
= 10mA IE = 0mA 65 — — V
= 25mA VBE = 0V 65 — — V
= 10mA IC = 0mA 3.5 — — V
VCE = 50V IE = 0mA — — 5 mA
VCE = 5V IC = 100mA 10 — — —
DYNAMIC
Symbol Test Conditi ons
P
OUT
G
Note: Pulse Widt h = 10µSec, Duty Cycle = 1%
f = 1025 — 1150MHz PIN = 13.0W VCE = 50 V 75 — — W
f = 1025 — 1150MHz PIN = 13.0W VCE = 50 V 7.6 — — dB
P
This devic e is suitabl e for use under other pulse wi dth/du ty cycle conditions .
Please c o ntact the fact or y for sp ec ific a pplic at ions a s sis tance .
Valu e
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
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PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0115
SD1534-01
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
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Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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