SGS Thomson Microelectronics SD1534-01 Datasheet
RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATI ONS
.80 WATTS (typ.) IFF 1030 - 1090 MHz
.75 W ATTS (min .) DME 10 25 - 1150 MHz
.50 WATTS (typ.) TACAN 960 - 1215 MHz
.8.0 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATI ON
.EMITTER BALLASTING AND L OW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.INFINITE LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.INPUT MATCHED, COMMON BASE
CONFIGURATION
ORDER CO DE
SD1534-01
PIN CONNECTION
SD1534-01
AVIONICS APPLICATIONS
.280 4LSL (M115)
epoxy sealed
BRANDING
1534-1
DESCRIPTION
The SD1534-01 is a gold metallized silicon, NPN
power tran sistor design ed for applic ations requ iring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1534-01 is packaged in the .280" input matched stripline package
resulting in im proved broadb and performance and
a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMAL DATA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 5.5 A
Power Dissipation 218.7 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.8 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
November 1992
1/3
SD1534-01
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
CBOIC
BV
CESIC
BV
EBOIE
I
CES
h
FE
= 10mA IE = 0mA 65 — — V
= 25mA VBE = 0V 65 — — V
= 10mA IC = 0mA 3.5 — — V
VCE = 50V IE = 0mA — — 5 mA
VCE = 5V IC = 100mA 10 — — —
DYNAMIC
Symbol Test Conditi ons
P
OUT
G
Note: Pulse Widt h = 10µSec, Duty Cycle = 1%
f = 1025 — 1150MHz PIN = 13.0W VCE = 50 V 75 — — W
f = 1025 — 1150MHz PIN = 13.0W VCE = 50 V 7.6 — — dB
P
This devic e is suitabl e for use under other pulse wi dth/du ty cycle conditions .
Please c o ntact the fact or y for sp ec ific a pplic at ions a s sis tance .
Valu e
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/3
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