RF & MICROWAVE T RANSIST ORS
.DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
.40 WATTS (typ.) IFF 1030 - 1090 MHz
. 35 W ATTS (m in.) D ME 1025 - 1150 MHz
. 25 WATTS (typ.) TACAN 960 - 1215 MHz
.9.0 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.EMITTER BALLASTING AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.INFINITE LOAD VSWR CAPABILITY AT
SPECIFIED OPERATING CONDITIONS
.IN PUT M ATCHED, COMMON BASE
CONFIGURATION
SD1530-08
AVI ONICS APPLICAT IONS
.250 SQ. 2LFL (M105)
hermeticallysealed
ORDER CODE
SD1530-08
PIN CONNECT I ON
BRANDING
1530-8
DESCRIPTI O N
The SD1530-08 is a gold metallized silicon, NPN
power transistor designed forapplications requiring
high peak power and low duty cycles such as
IFF, DME and TACAN. The SD1530-08 is packaged in the .250” input matched hermetic stripline
flange package resulting in improved broadband
performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Param eter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMAL DATA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 2.6 A
Power Dissipation 87.5 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 2.0 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
65 to +150
−
°
C
°
C
August 1993
1/5
SD1 530-0 8
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Co nditions
BV
CBOIC
BV
CESIC
BV
EBOIE
I
CES
h
FE
= 10 mA IE= 0mA 65 — — V
= 25 mA VBE= 0 V 65 — — V
= 1mA IC=0mA 3.5 — — V
VCE= 50 V IE= 0mA — — 5 mA
VCE= 5V IC=500 mA 10 — 200
Min. Typ. Max.
Value
DYNAMIC
Symbol Test C onditions
P
OUT
P
η
Note: Pulse W i dth = 10µSec, Duty Cycle = 1%
f = 1025 − 1150 MHz PIN= 5.0 W VCE= 50 V 35 — — W
f = 1025 − 1150 MHz PIN= 5.0 W VCE= 50 V 8.5 — — dB
G
cf=1025 − 1150 MHz PIN= 5.0 W VCE= 50 V 30 — — %
T his dev ice is s uitable for use unde r other pulse width/ duty cycle c onditions.
Please contact the fac tor y for spec ific applic ations assi stance.
Value
Min. Typ. Max.
Unit
Unit
TYPICAL PERFOR MA NCE
POWER OUTPUT vs POWER INPUT
2/5