SGS Thomson Microelectronics SD1530-01 Datasheet

RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH POWER PU LSED
IFF, DME, TACAN APPLICATIONS
.40 W ATTS (typ.) IFF 1030 - 1090 MHz
. 3 5 WATTS (min.) DME 1025 - 1150 MHz
. 9.0 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.EMITT ER BALLASTING AND LOW
THERMAL RESISTANCE FOR RELIABILITY AND RUGGEDNESS
.INFIN ITE LOAD VSWR C APABILI TY AT
SPECIFIED OPERATING CON D ITIONS
. INPUT M ATCH ED , CO M MON BASE
CONFIGURATION
SD1530-01
AVIONI CS APPLICA TIONS
.280 4LS L (M 115)
epoxy sealed
ORDER CODE
SD1530-01
PIN CONNECTION
BRANDING
1530-1
DESC RIPTION
The SD1530-01 is a gold metallized silicon, NPN power transistordesignedfor applications requiring high peak power and low duty cycles such as IFF, DME and TACAN. The SD1530-01 is pack­aged in the .280” input matched stripline package resulting in improved broadband performance and a low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DATA
R
TH(j-c)
Collector-Base Voltage 65 V Collector-Emitter Voltage 65 V Emitter-Base Voltage 3.5 V Device Current 2.6 A Power Dissipation 87.5 W Junction Temperature +200 Storage Temperature
Junction-Case Thermal Resistance 2.0 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
°
C
°
C
October 11, 1993
rev. 1 1/3
SD1530-01
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CESIC
BV
EBOIE
I
CBO
h
FE
= 20mA IE= 0mA 60 V = 20mA VBE= 0V 60 V = 2mA IC= 0mA 3.5 V
VCB= 50V IE= 0mA 2 mA VCB= 5V IC= .5A
DYNAMIC
Symbol Test C ond itions
P
OUT
G
Note: Pulse Width=10µSec, Duty Cycle=1%
f = 1025 1150MHz PIN= 5.6 W VCE= 50 V 35 W f = 1025 1150MHz PIN= 5.6 W VCE= 50 V 9.0 dB
P
This device i s suitabl e for use under other pulse w idth/duty cycle conditions. Please contact t he factory f or speci fic appl ications assist ance.
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
IMPEDA NC E DATA
TYPICAL INPUT IMPEDANCE
TYPICAL CO LLECTOR LOAD
IMPEDANCE
2/3 rev. 1
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