SGS Thomson Microelectronics SD1528-08 Datasheet
RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH POWER PULSED
IFF, DME, TACAN APPLICATIONS
.20 WATTS (typ.) IF F 1030 - 1090 MHz
. 1 5 WATTS (min.) DME 1025 - 1150 MHz
. 1 5 WATTS (ty p.) TACAN 960 - 1215 MH z
. 10 dB MIN. GAIN
.REFRACTORY GOLD METALLIZATION
.EMITTER BALLASTING AND LOW
THERMAL RESISTANCE
.20:1 LOAD VSWR CAPABILITY AT
SPECIFIED O PERATIN G COND ITIONS
. INPUT M ATCH ED , CO M MON BASE
CONFIGURATION
SD1528-08
AVIONI CS APPLICA TIONS
.250 SQ. 2LF L (M105)
hermetically sealed
ORDER CODE
SD1528-08
PIN CONNECTION
BRANDING
1528-8
DESC RIPTION
The SD1528-08 is a gold metallized, silicon NPN
power transistor. The SD1528-08 is designed for
applications requiring high peak power and low
duty cycles such as IFF, DME and TACAN. The
SD1528-08 ispackaged in the .250” inputmatched
hermetic stripline flange package resulting in improved broadband performance and a low thermal
resistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
V
V
P
T
CBO
CEO
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 1.5 A
Power Dissipation 87.5 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base
65 to +150
−
°
C
°
C
THERMA L DATA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance 2.0 °C/W
1/4
SD1528-08
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
CBO
CES
EBO
IC= 10mA IE= 0mA 65 — — V
IC= 25mA VBE= 0V 65 — — V
IE= 1mA IC= 0mA 3.5 — — V
VCE= 50V IE= 0mA — — 2 mA
Min. Typ. Max.
Value
DYNAMIC
Symbol Test Cond iti ons
P
OUT
G
P
η
cf=1025 — 1150MHz PIN= 1.5 W VCE= 50 V 30 — — %
Note: Pulse Width= 10µSec, Duty Cycle= 1%
f = 1025 — 1150MHz PIN= 1.5 W VCE= 50 V 15 — — W
f = 1025 — 1150MHz PIN= 1.5 W VCE= 50 V 10 — — dB
Value
Min. Typ. Max.
Unit
Unit
TYPICA L P ERFO R MA NCE
POWER OUTPU T vs POWER INPUT
POWER OUTPUT vs FREQUENCY
2/4
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