RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH POWER PU LSED
IFF, DME, TACAN APPLICATIONS
.20 W (typ.) IFF 1030 - 1090 MHz
.15 W (mi n.) DME 1025 - 1150 MHz
. 15 W (typ.) TACAN 960 - 1215 MHz
.REFRACTORY GOLD METALLIZATION
.EMITTER BALLASTED AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.20:1 LOAD VSWR CAPABILITY @
SPECIFIED OPERATING C OND ITION S
. INPUT M ATCH ED , CO M MON BASE
CONFIGURATION
SD1528-06
AVIONI CS APPLICA TIONS
.280 4 LFL (M115)
epoxy sealed
ORDER CODE
SD1528-06
PIN CONNECTION
BRANDING
1528-6
DESC RIPTION
The SD1528-06 isa gold metallized epitaxial silicon
NPN power transistor. The SD1528-06 isdesigned
for applications requiring high peak power and
low duty cycles such as IFF, DME and TACAN.
The SD1528-06 is packaged in the .280” input
matched stripline package, resulting in improved
broadband performance and low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
V
V
P
T
CBO
CES
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 1.5 A
Power Dissipation 87.5 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
THERMA L DATA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance 2.0 °C/W
1/4
SD1528-06
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CBO
CES
EBO
FE
IC= 10mA IE= 0mA 65 — — V
IC= 25mA VBE= 0V 65 — — V
IE= 1mA IC= 0mA 3.5 — — V
VCE= 50V IE= 0mA — — 2 mA
VCE= 5V IC= .1A 10 — 200 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test C ond itions
P
OUT
G
P
η
cf=1025 — 1150MHz PIN= 1.5 W VCE= 50 V 30 — — %
Note: Pulse Width=10µsec, D u t y Cycle=1%
f = 1025 — 1150MHz PIN= 1.5 W VCE= 50 V 15 — — W
f = 1025 — 1150MHz PIN= 1.5 W VCE= 50 V 10 — — dB
Value
Min. Typ. Max.
Unit
Unit
TYPICA L P ERFO R MA NCE
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs FREQUENCY
2/4
IMPEDA NCE D ATA
TYPICAL INPUT
IMPEDANCE
Z
IN
TYPICAL COLLECTOR
LOAD IMPEDANCE
SD 1528-06
FREQ. ZIN(Ω)Z
960 MHz 2.5 + j 12.5 17.0 + j 15.5
1030 MHz 3.5 + j 12.5 17.0 + j 14.5
1090 MHz 3.0 + j 13.5 19.5 + j 12.5
Z
CL
1150 MHz 3.5 + j 14.0 18.0 + j 12.0
1215 MHz 5.0 + j 17.0 16.0 + j 12.0
CL
(Ω)
3/4
SD1528-06
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0115
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability forthe
consequences of useof such information nor forany infringement of patents orother rights of third parties which may results from its use. No
license isgranted byimplication or otherwiseunder any patentor patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication aresubject to changewithout notice. This publication supersedes andreplaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse ascritical componentsinlife supportdevices orsystemswithout express
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
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