SGS Thomson Microelectronics SD1528-06 Datasheet
RF & MICROWAVE TRANSISTORS
.DESIGNED FOR HIGH POWER PU LSED
IFF, DME, TACAN APPLICATIONS
.20 W (typ.) IFF 1030 - 1090 MHz
.15 W (mi n.) DME 1025 - 1150 MHz
. 15 W (typ.) TACAN 960 - 1215 MHz
.REFRACTORY GOLD METALLIZATION
.EMITTER BALLASTED AND LOW
THERMAL RESISTANCE FOR
RELIABILITY AND RUGGEDNESS
.20:1 LOAD VSWR CAPABILITY @
SPECIFIED OPERATING C OND ITION S
. INPUT M ATCH ED , CO M MON BASE
CONFIGURATION
SD1528-06
AVIONI CS APPLICA TIONS
.280 4 LFL (M115)
epoxy sealed
ORDER CODE
SD1528-06
PIN CONNECTION
BRANDING
1528-6
DESC RIPTION
The SD1528-06 isa gold metallized epitaxial silicon
NPN power transistor. The SD1528-06 isdesigned
for applications requiring high peak power and
low duty cycles such as IFF, DME and TACAN.
The SD1528-06 is packaged in the .280” input
matched stripline package, resulting in improved
broadband performance and low thermal resistance.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
V
V
P
T
CBO
CES
EBO
I
C
DISS
T
J
STG
Collector-Base Voltage 65 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 3.5 V
Device Current 1.5 A
Power Dissipation 87.5 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Base
65 to +150
−
°
C
°
C
THERMA L DATA
R
TH(j-c)
November 1992
Junction-Case Thermal Resistance 2.0 °C/W
1/4
SD1528-06
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CBO
CES
EBO
FE
IC= 10mA IE= 0mA 65 — — V
IC= 25mA VBE= 0V 65 — — V
IE= 1mA IC= 0mA 3.5 — — V
VCE= 50V IE= 0mA — — 2 mA
VCE= 5V IC= .1A 10 — 200 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test C ond itions
P
OUT
G
P
η
cf=1025 — 1150MHz PIN= 1.5 W VCE= 50 V 30 — — %
Note: Pulse Width=10µsec, D u t y Cycle=1%
f = 1025 — 1150MHz PIN= 1.5 W VCE= 50 V 15 — — W
f = 1025 — 1150MHz PIN= 1.5 W VCE= 50 V 10 — — dB
Value
Min. Typ. Max.
Unit
Unit
TYPICA L P ERFO R MA NCE
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs FREQUENCY
2/4
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