SGS Thomson Microelectronics SD1492 Datasheet
RF & MICROWAVE TRANSISTORS
.470 - 860 MHz
.28 VOLTS
.CLASS AB PUSH PULL
. D ESI GN ED FOR H I GH POWER
CAPABILITY
. GOLD METALLIZATION
.DIFFUSED EMITTER BALLAST
RESISTORS
. CO MMON EMITTER CONFIGURATION
.INTERNAL I NPUT MATCHING
.P
OUT
150 W MIN. WITH 6.5 dB GAIN
=
SD1492
TV/LINEAR APPLICATIONS
2 x .437 x .450 2LFL (M175)
epoxy sealed
ORDER CODE
SD1492
PIN CONNECTION
BRANDING
SD1492
DESC RIPTION
The SD1492 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
UHF and Band IV, V television transmitters and
transposers.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 60 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 3.0 V
Device Current 25 A
Power Dissipation 318 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.55 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
65 to +150
−
°
C
°
C
November 1992
1/7
SD1492
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CEOIC
BV
EBOIE
I
CES
h
FE
= 100mA IE= 0mA 60 — — V
= 100mA IB= 0mA 30 — — V
= 50mA IC= 0mA 3.0 — — V
VCE= 28V IE= 0mA — — 10 mA
VCE= 5V IC= 3A 15 — 70 —
DYNAMIC
Symbol Test C ond itions
P
*f=860 MHz VCE= 28 V ICQ= 2 x 500 mA 150 — — W
OUT
PG*P
η
c* P
C
OB
Note: * 1 dB Compr ess ion Point
= 150 W VCE= 28 V ICQ= 2x500mA 6.5 — — dB
OUT
= 150 W VCE= 28 V ICQ= 2x500mA 45 — — %
OUT
f = 1 MHz VCB= 28 V — — 100 pF
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/7
TYPICA L PERFO R MA NCE
SD1492
POWER OUTPUT vs POWER INPUT
INTERMODULATION DISTORTION vs POWER
OUTPUT
BROADBAND POWER GAIN vs FREQUENCY
COLLECTOR EFFICIENCY vs FREQUENCY
THERMAL RESISTANCE vs CASE TEMPERATURE
SAFE OPERATING AREA
40
35
30
25
20
15
10
5
0
0 5 10 15 20 25 30 35 40
3/7
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