SGS Thomson Microelectronics SD1490 Datasheet
RF & MICROWAVE TRANSISTORS
.470 - 860 MHz
.28 VOLTS
.CLASS A PUSH PULL
.D ESI GN ED FOR H I GH PO WER L INEAR
OPERATION
.HIGH SATURATED POWER CAPABILITY
.GOLD METALLIZATION
.DIFFUSED EMITTER BALLAST
RESISTORS
. CO MMON EMITTER CONFIGURATION
.INTERNAL I NPUT MATCHING
.P
OUT
25 W MIN. WITH 9.0 dB GAIN
=
SD1490
TV/LINEAR APPLICATIONS
.438 x .450 2LF L (M173)
epoxy sealed
ORDER CODE
SD1490
PIN CONNECTION
BRANDING
SD1490
DESC RIPTIO N
The SD1490 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class A operation in
UHF and Band IV, V television transmitters and
transposers.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 45 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 3.0 V
Device Current 8 A
Power Dissipation 135 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.3 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
50 to +150
−
°
C
°
C
June 1993
1/6
SD1490
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CEOIC
BV
EBOIE
I
CEO
h
FE
= 50mA IE= 0mA 45 — — V
= 200mA IB= 0mA 30 — — V
= 10mA IC= 0mA 3.0 — — V
VCE= 25V IE= 0mA — — 5 mA
VCE= 5V IC= 3A 10 — 80 —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
f = 860 MHz VCE= 25 V IC= 3.2 A 25 — — W
f = 860 MHz VCE= 25 V IC= 3.2 A 8.0 — — dB
P
CMOD f = 860 MHz VCE= 25 V P
IMD3*f=860 MHz VCE= 25 V P
C
OB
Note: * 3 Tone Testing (−8,−10,−16 dB R elative to P
f = 1 MHz VCB= 28 V — 70 — pF
REF
Value
Min. Typ. Max.
Value
Min. Typ. Max.
= 25 W — — 20 %
REF
= 25 W — — −45 dB
REF
)
Unit
Unit
2/6
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