SGS Thomson Microelectronics SD1489 Datasheet
RF & MICROWAVE TRANSISTORS
.470 - 860 MHz
.28 VOLTS
.CLASS AB PUSH PULL
. D ESI GN ED FOR H I GH PO WER L INEAR
OPERATION
.HIGH SATURATED POWER CAPABILITY
.GOLD METALLIZATION
.DIFFUSED EMITTER BALLAST
RESISTORS
. CO MMON EMITTER CONFIGURATION
.INTERNAL I NPUT MATCHING
.P
OUT
50 W MIN. WITH 6.5 dB GAIN
=
SD1489
TV/LINEAR APPLICATIONS
.438 x .450 2LF L (M173)
epoxy sealed
ORDER CODE
SD1489
PIN CONNECTION
BRANDING
SD1489
DESC RIPTIO N
The SD1489 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
UHF and Band IV, V television transmitters and
transposers.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 45 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 3.0 V
Device Current 8 A
Power Dissipation 175 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.0 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
65 to +150
−
°
C
°
C
November 1992
1/5
SD1489
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CERIC
BV
CEOIC
BV
EBOIE
I
CEO
h
FE
= 50mA IE= 0mA 45 — — V
= 20mA RBE= 10Ω 40 — — V
= 200mA IB= 0mA 30 — — V
= 10mA IC= 0mA 3.0 — — V
VCE= 28V IE= 0mA — — 5 mA
VCE= 5V IC= 3A 10 — 80 —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
η
C
C
OB
Note: Pulse Width= 10µSec, D uty Cycle= 1%
f = 860 MHz VCE= 28 V ICQ= 2x250mA 50 — — W
f=860 MHz VCE= 28 V ICQ= 2 x 250 mA 6.8 — — dB
P
f = 860 MHz VCE= 28 V ICQ= 2 x 250 mA — 45 — %
f = 1 MHz VCB= 28 V — 70 — pF
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/5
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