SGS Thomson Microelectronics SD1488 Datasheet
.470 MHz
.12.5 VOLTS
.EFFICIENCY 50%
.COMMON EMITTER
.P
OUT
38 W MIN. WITH 5.8 dB GAIN
=
SD1488
RF & MICROWAVE TRANSISTORS
UHF MOBILE APPLI CATION S
.500 6LF L (M111)
EPOXY SEALED
ORDER CODE
SD1488
PIN CONNECTION
BRANDING
SD1488
DESC RI PT ION
The SD1488 is a 12.5 V Class C epitaxial silicon
NPN planar transistor designed primarily for broadband applications inthe 450 -512 MHz land mobile
radio band. This device utilizes diffused emitter
resistors to withstand infinite VSWR at rated operating conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 36 V
Collector-Emitter Voltage 16 V
Emitter-Base Voltage 4.0 V
Device Current 8.0 A
Power Dissipation 117 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.5 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
July 24, 1993
1/4
SD1488
ELECTRICAL SPECIFICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CES
CEO
EBO
FE
IC= 15 mA VBE= 0V 36 — — V
IC= 50 mA IB= 0mA 16 — — V
IE= 5mA IC=0 mA 4.0 — — V
VCE= 12.5 V IE= 0mA — — 5 mA
VCE= 5V IC=1A 20 — 300 —
DYNAMIC
Symbol Test C onditi ons
P
OUT
G
η
C
P
C
OB
f = 470 MHz PIN= 10.0 W VCC= 12.5 V 38 — — W
f = 470 MHz PIN= 10.0 W VCC= 12.5 V 5.8 — — dB
f = 470 MHz P
= 38 W VCC= 12.5 V 50 — — %
OUT
f = 1 MHz VCB= 12.5 V — 95 — pF
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT vs POWER INPUT
POWER OUTPUT & COLLECTOR
EFFICIENCY vs FREQUENCY
2/4
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