SGS Thomson Microelectronics SD1487 Datasheet
.30 MHz
.12.5 VOLTS
.IMD −30 dB
. COMMON EMITTER
.GOLD METALLIZATION
.P
OUT
100WMIN.WITH12.0dBGAIN
=
SD1487
RF & MICROWAVE TRANSISTORS
HF SSB APPLICA TIONS
.500 4LF L (M174)
epoxy sealed
ORDER CODE
SD1487
PIN CONNECTION
BRANDING
SD1487
DESCRIPTI ON
The SD1487 is a 12.5 V Class C epitaxial silicon
NPN planar transistor designed primarily for HF
communications. This device utilizes state-of-theart diffused emitter ballasting to achieve extreme
ruggedness under severe operating conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 36 V
Collector-Emitter Voltage 18 V
Emitter-Base Voltage 4.0 V
Device Current 20 A
Power Dissipation 290 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.6 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/5
SD1487
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
BV
I
CES
h
CBO
CES
CEO
EBO
FE
IC= 100mA IE= 0mA 36 — — V
IC= 100mA VBE= 0V 36 — — V
IC= 100mA IB= 0mA 18 — — V
IE= 20mA IC= 0mA 4.0 — — V
VCE= 15V IE= 0mA — — 20 mA
VCE= 5V IC= 5A 10 — 200 —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
P
IMD3*P
C
OB
*N ote: f= 30 + 30.00 1M H z
f = 30 MHz VCE= 12.5 V ICQ= 150mA 100 — — W
f = 30 MHz VCE= 12.5 V ICQ= 150mA 11 13 — dB
= 100WPEP VCE= 12.5 V ICQ= 150mA — — −30 dBc
OUT
f = 1 MHz VCB= 12.5 V — 400 — pF
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER GAIN & COLLECTOR
EFFICI EN CY vs POWER INPUT
IMD vs POWER OUTPUT, PEP
2/5
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