.136 - 175 MHz
.28 VOLTS
.EFFICIENCY 55%
.COMMON EMITTER
.GOLD METALLIZATION
.INTERNAL INPUT MATCHING
.P
OUT
125 W MIN. WITH 9.2 dB GAIN
=
SD1480
RF & MICROWAVE TRANSISTORS
VHF APPLICATIONS
.500 6LF L (M111)
epoxy sealed
ORDER CODE
SD1480
PIN CONNECTION
BRANDING
SD1480
DESC RIPTIO N
The SD1480 is a common emitter 28 V Class C
epitaxial silicon NPN planar transistor designed
primarily for VHF communications applications.
This internally matched device incorporates diffused emitter ballasting resistorsnad provides high
gain and stable operation across the entire 136
- 175 MHz VHF communications band.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 36 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 4.0 V
Device Current 20 A
Power Dissipation 270 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.65 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Emitter
65 to +150
−
°
C
°
C
June 20, 1994
1/6
SD1480
ELECTRICAL SPECIF ICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CESIC
BV
CEOIC
BV
EBOIE
I
CES
h
FE
= 100 mA IE= 0mA 65 — — V
= 100 mA VBE= 0V 65 — — V
= 100 mA IB= 0mA 35 — — V
= 10 mA IC= 0 mA 4.0 — — V
VCE= 30 V IE= 0mA — — 15 mA
VCE= 5V IC=5A 20 — 200 —
DYNAMIC
Symbol Test Conditions
P
OUT
P
η
C
OB
Load
f = 150 MHz PIN= 15 W VCE= 28 V 125 — — W
f = 150 MHz P
G
cf=150 MHz P
= 125 W VCE= 28 V 9.2 — — dB
OUT
= 125 W VCE= 28 V 55 — — %
OUT
f = 1 MHz VCB= 28 V — — 250 pF
f = 150 MHz PIN= 15 W VCE= 28 V 20:1 — — VSWR
Mismatch
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
OUTPUT CAPACITANCE vs COLLECTOR BASE
VOLTAGE
INPUT CAPACITANCE vs EMITTER BASE VOLTAGE
2/6
TYPICA L PERFOR MA NCE (cont’ d)
SD1480
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs COLLECTOR EMITTER
VOLTAGE
INPUT VSWR vs FREQUENCY
POWER GAIN & COLLECTOR EFFICIENCY vs
FREQUENCY
3/6
SD1480
IMPEDA NCE DATA
TYPICAL INPUT IMPEDANCE
TYPICAL COLLECTOR LOAD IMPEDANCE
4/6
TEST CIRCUIT
SD1480
C1 : .080pF Arco 462
C2 : 25mF Underwood
C3 : 2.020pF Arco 402
C4, C5 : 15pF Underwood
C6 : 240pF ATC Chip Capacitor
C7 : 270pF ATC Chip Capacitor
C8 : 150pF Underwood
C9 : 180pF Underwood
C10 : 100pF Underwood
C11 : 8.20pF Johanson JMC5501
C12 : 33pF Underwood
C13, C15 : .15µF Disc Capacitor
C14 : 100pF Underwood
C16 : 10µF Electrolytic
L1 : See Detail A
L2 : Ferroxcube VK200 19/4B
L3 : 1 Turn #16 AWG 250 I.D. Close Wound
L4 : 5 Turns #16 AWG 250 I.D. Close Wound
Z1 : Microstrip, .330” W x 1.600” L
Z2 : Microstrip, .200” W x .400” L
Z3 : Microstrip, .200” W x .600” L
Z4 : Microstrip, .200” W x 1.600” L
PCB: 3M 1oz. Doulbe Sided 1/16” Teflon-Glass, Er=2.5
5/6
SD1480
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0111 rev. D
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsibility
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life
support devices or systems without express written approval of SGS-THOMSON Microelectronics.
1994 SGS-THOMSON Microelectronics - All Rights Reserved
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
6/6
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