SGS Thomson Microelectronics SD1480 Datasheet
.136 - 175 MHz
.28 VOLTS
.EFFICIENCY 55%
.COMMON EMITTER
.GOLD METALLIZATION
.INTERNAL INPUT MATCHING
.P
OUT
125 W MIN. WITH 9.2 dB GAIN
=
SD1480
RF & MICROWAVE TRANSISTORS
VHF APPLICATIONS
.500 6LF L (M111)
epoxy sealed
ORDER CODE
SD1480
PIN CONNECTION
BRANDING
SD1480
DESC RIPTIO N
The SD1480 is a common emitter 28 V Class C
epitaxial silicon NPN planar transistor designed
primarily for VHF communications applications.
This internally matched device incorporates diffused emitter ballasting resistorsnad provides high
gain and stable operation across the entire 136
- 175 MHz VHF communications band.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 36 V
Collector-Emitter Voltage 65 V
Emitter-Base Voltage 4.0 V
Device Current 20 A
Power Dissipation 270 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.65 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Emitter
65 to +150
−
°
C
°
C
June 20, 1994
1/6
SD1480
ELECTRICAL SPECIF ICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CESIC
BV
CEOIC
BV
EBOIE
I
CES
h
FE
= 100 mA IE= 0mA 65 — — V
= 100 mA VBE= 0V 65 — — V
= 100 mA IB= 0mA 35 — — V
= 10 mA IC= 0 mA 4.0 — — V
VCE= 30 V IE= 0mA — — 15 mA
VCE= 5V IC=5A 20 — 200 —
DYNAMIC
Symbol Test Conditions
P
OUT
P
η
C
OB
Load
f = 150 MHz PIN= 15 W VCE= 28 V 125 — — W
f = 150 MHz P
G
cf=150 MHz P
= 125 W VCE= 28 V 9.2 — — dB
OUT
= 125 W VCE= 28 V 55 — — %
OUT
f = 1 MHz VCB= 28 V — — 250 pF
f = 150 MHz PIN= 15 W VCE= 28 V 20:1 — — VSWR
Mismatch
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
OUTPUT CAPACITANCE vs COLLECTOR BASE
VOLTAGE
INPUT CAPACITANCE vs EMITTER BASE VOLTAGE
2/6
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