SGS Thomson Microelectronics SD1477 Datasheet
.175 MHz
.12.5 VOLTS
.COMMON EMITTER
.P
OUT
100 W MIN. WITH 6.0 dB GAIN
=
SD1477
RF & MICROWAVE TRANSISTORS
VHF MOBILE APPLICATIONS
.500 6LF L (M111)
epoxy sealed
ORDER CODE
SD1477
PIN CONNECTION
BRANDING
SD1477
DESC RI PT ION
The SD1477 is a 12.5 V Class C epitaxial silicon
NPN planar transistor designed primarily for VHF
FM communications. This device utilizes diffused
emitter resistors towithstandextremelyhigh VSWR
under rated operating conditions, and is internally
input matched to optimize power gain and efficiency over the 136 - 175 MHz band.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 36 V
Collector-Emitter Voltage 18 V
Collector-Emitter Voltage 36 V
Emitter-Base Voltage 4.0 V
Device Current 20 A
Power Dissipation 270 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.65 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/6
SD1477
ELECTRICAL SPECIFICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
BV
I
CES
h
CBO
CES
CEO
EBO
FE
IC= 50mA IE= 0mA 36 — — V
IC= 100mA VBE= 0V 36 — — V
IC= 100mA IB= 0mA 18 — — V
IE= 10mA IC= 0mA 4.0 — — V
VCE= 15V IE= 0mA — — 15 mA
VCE= 5V IC= 5A 10 — — —
DYNAMIC
Symbol Test C onditi ons
P
OUT
G
C
P
OB
f = 175 MHz PIN= 25 W VCC= 12.5 V 100 — — W
f = 175 MHz PIN= 25 W VCC= 12.5 V 6.0 — — dB
f = 1 MHz VCB= 12.5 V — 350 — pF
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT vs FREQUENCY
POWER OUTPUT vs POWER INPUT
2/6
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