RF & MICROWAVE TRANSISTORS
.55 - 88 MHz
.32 VOLTS
.COMMON EMITTER
.GOLD METALLIZATION
.INTERNAL INPUT MATCHING
.C LASS AB PUSH PULL
. HIGH SATURATED POWER CAPABILITY
.DIFFUSED EMITTER BALLAST
RESISTORS
. D ESI GN ED FOR H IGH POWER LINEAR
OPERATION
.P
OUT
240WMIN.WITH12.0dBGAIN
=
SD1476
TV/LINEAR APPLICATIONS
2x.437x.4502LFL(M165)
epoxy sealed
ORDER CODE
SD1476
PIN CONNECTION
BRANDING
SD1476
DESC RIPT ION
The SD1476 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
VHF and Band I television transmitters and transposers.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 70 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 4.0 V
Device Current 25 A
Power Dissipation 430 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.4 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
50 to +150
−
°
C
°
C
November 1992
1/8
SD1476
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
BV
I
I
CBO
CER
CEO
EBO
CEO
CBO
h
FE
IC= 50mA IE= 0mA 70 — — V
IC= 50mA RBE= 51Ω 68 — — V
IC= 100mA IB= 0mA 40 — — V
IE= 20mA IC= 0mA 4.0 — — V
VCE= 30V IE= 0mA — — 10 mA
VCB= 30V IE= 0mA — — 10 mA
VCE= 5V IC= 7A 10 — 50 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test C ond itions
P
*f=88 MHz VCE= 32 V ICQ= 2 x 400mA 240 — — W
OUT
G
P
η
cf=88 MHz VCE= 32 V ICQ= 2 x 400mA 50 — — %
C
OB
Note: *1 dB Comp ression
f = 88 MHz VCE= 32 V ICQ= 2 x 400mA 12 — — dB
f = 1 MHz VCB= 28 V — — 220 pF
Value
Min. Typ. Max.
Unit
Unit
2/8
TYPICA L PERFO R MA NCE
SD1476
POWER OUTPUT vs POWER INPUT
THERMAL RESISTANCE vs CASE
TEMPERATURE
POWER GAIN vs FREQ U ENCY
COLLECTOR EFFICIENCY vs FREQUENCY
3/8
SD1476
IMPEDA NCE DATA
TYPICAL INPUT
IMPEDANCE
Z
IN
TYPICAL COLLECTOR
LOAD IMPEDANCE
Z
CL
FREQ. ZIN(Ω)ZCL(Ω)
55 MHz 1.7 j 1.0 6.1 + j 1.0
65 MHz 1.5 + j 1.3 7.0 + j 2.1
75 MHz 1.0 + j 1.1 6.2 + j 2.0
90 MHz 0.8 + j 0.4 3.4 + j 4.4
P
= 240 W
OUT
VCC= 32 V
4/8
PRINTED CIRCUIT BOARD LAYOUT
SD1476
5/8
SD1476
TEST CIRCUIT
C1 : 10pF + 33pF, ATC 100B
C2 : 47pF, ATC 100B
C3, C’3 : 1.5nF + 2.2nF, ATC 100B
C4 : 4 - 60pF, Arco 404
C5 : 2 x 100pF + 47pF, ATC 100B
C6 : 2 x 330pF + 3 x 180pF +270pF, ATC 100B
C7 : 150pF + 10pF, ATC 100B
C8, C’8 : 4.7nF, ATC 100B
C9 : 4 - 40pF, Arco 403
C10 : 10pF, ATC 100B
C11 : 43pF, ATC 100B
C12, C’12 : 1µF 63V, LCC CPM13B
C13, C’13 : 82nF 100V, LCC 745
C14, C’14 : 270nF 63V, LCC7950
L1, L7 : 4 Turns Diameter 7mm, Wire Diameter 1.5mm
L2 : 7 Turns Diameter 25mm, Coaxial Cable Zc
L3, L’3 : 2 Turns Diameter 2.5mm, Wire Diameter 0.8mm
L4, L’4 : Length 15mm, Wire Diameter 1.5mm
L5, L’5 : Length 30mm, Wire Diameter 1.5mm
L6 : 6 Turns Diameter 25mm, Coaxial Cable Zc
L8, L’8 : 16 Turns Diameter, Wire Diameter 1.5mm
L9, L’9 : 1 Turn, Wire Diameter 1.5mmin Ferrite
L10, L’10
L11, L’11 : 14 Turns, Wire Diameter 0.6mm Around Resistor 1W
R1, R’1
R2, R’2 : 180Ω,1W
Material : Epoxy 63 mil, Er=2.55
(stackpole 57 33 12)
25Ω
=
25Ω
=
6/8
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0165
SD1476
7/8
SD1476
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability for the
consequences of useof such information nor forany infringement of patents orother rights of third parties which may results from its use. No
license isgranted byimplication or otherwiseunder any patentor patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in this publication aresubject to changewithout notice. This publication supersedesandreplaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse ascritical componentsinlife supportdevices orsystemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
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SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
8/8
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