SGS Thomson Microelectronics SD1476 Datasheet
RF & MICROWAVE TRANSISTORS
.55 - 88 MHz
.32 VOLTS
.COMMON EMITTER
.GOLD METALLIZATION
.INTERNAL INPUT MATCHING
.C LASS AB PUSH PULL
. HIGH SATURATED POWER CAPABILITY
.DIFFUSED EMITTER BALLAST
RESISTORS
. D ESI GN ED FOR H IGH POWER LINEAR
OPERATION
.P
OUT
240WMIN.WITH12.0dBGAIN
=
SD1476
TV/LINEAR APPLICATIONS
2x.437x.4502LFL(M165)
epoxy sealed
ORDER CODE
SD1476
PIN CONNECTION
BRANDING
SD1476
DESC RIPT ION
The SD1476 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
VHF and Band I television transmitters and transposers.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 70 V
Collector-Emitter Voltage 40 V
Emitter-Base Voltage 4.0 V
Device Current 25 A
Power Dissipation 430 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.4 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
50 to +150
−
°
C
°
C
November 1992
1/8
SD1476
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
BV
I
I
CBO
CER
CEO
EBO
CEO
CBO
h
FE
IC= 50mA IE= 0mA 70 — — V
IC= 50mA RBE= 51Ω 68 — — V
IC= 100mA IB= 0mA 40 — — V
IE= 20mA IC= 0mA 4.0 — — V
VCE= 30V IE= 0mA — — 10 mA
VCB= 30V IE= 0mA — — 10 mA
VCE= 5V IC= 7A 10 — 50 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test C ond itions
P
*f=88 MHz VCE= 32 V ICQ= 2 x 400mA 240 — — W
OUT
G
P
η
cf=88 MHz VCE= 32 V ICQ= 2 x 400mA 50 — — %
C
OB
Note: *1 dB Comp ression
f = 88 MHz VCE= 32 V ICQ= 2 x 400mA 12 — — dB
f = 1 MHz VCB= 28 V — — 220 pF
Value
Min. Typ. Max.
Unit
Unit
2/8
TYPICA L PERFO R MA NCE
SD1476
POWER OUTPUT vs POWER INPUT
THERMAL RESISTANCE vs CASE
TEMPERATURE
POWER GAIN vs FREQ U ENCY
COLLECTOR EFFICIENCY vs FREQUENCY
3/8
Loading...