SGS Thomson Microelectronics SD1463 Datasheet
.400 MHz
.28 VOLTS
.EFFICIENCY 60%
.COMMON EMITTER
.GOLD METALLIZATION
.P
OUT
125 W MIN. WITH 7.0 dB GAIN
=
SD1463
(TCC0204-125)
RF & MICROWAVE TRANSISTORS
VHF/U HF APPLICATI ONS
.400 x .425 8LFL (M168)
epoxy sealed
ORDER C OD E
SD1463
PI N CONNECTION
BRAND I NG
0204-125
DESC RIP TI ON
The SD1463 is a 28 V Class C gold metallized
epitaxial silicon NPN planar transistor designed
for UHF military and commercial equipment. The
SD1463 is an internally matched, broadband device optimized for operation within the 225 - 400
MHz frequency range.This device utlizies diffused
emitter resistors to achieve 10:1 VSWR load mismatch capability at rated operating conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symb o l Parameter Value Uni t
V
V
V
P
T
CBO
CEO
EBO
I
C
DISS
T
J
STG
Collector-BaseVoltage 60 V
Collector-Emitter Voltage 30 V
Emitter-BaseVoltage 4.0 V
Device Current 15 A
Power Dissipation 270 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Base
2. Emitter
65 to +150
−
°
C
°
C
THERMAL DATA
R
TH(j-c)
August 23, 1996
Junction-CaseThermal Resistance 0.65 °C/W
1/3
SD 1463 (TCC 0204- 125)
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CESIC
BV
CEOIC
BV
EBOIE
I
CBO
h
FE
= 100 mA IE= 0mA 60 — — V
= 80 mA VBE= 0 V 60 — — V
= 50 mA IB= 0mA 30 — — V
= 20 mA IC= 0 mA 4.0 — — V
VCB= 30 V IE= 0mA — — 10 mA
VCE= 5V IC=1 A 20 — 200 —
DYNAMIC
Symbol Test Co nditions
P
IN
G
η
f = 400 MHz P
f = 400 MHz P
P
cf=400 MHz P
= 125 W VCC= 28 V — — 25 W
OUT
= 125 W VCC= 28 V 7.0 — — dB
OUT
= 125 W VCC= 28 V 60 — — %
OUT
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Uni t
Uni t
IMPEDANCE D ATA
FREQ. Z
(Ω)Z
IN
225 MHz 0.5 + j 2.5 8.8 + j 3.5
400 MHz 1.5 + j 1.7 5.0 + j 0.0
CL
(Ω)
2/3
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