SGS Thomson Microelectronics SD1459 Datasheet
RF & MICROWAVE TRANSISTORS
.170 - 230 MHz
.28 VOLTS
.COMMON EMITTER
.GOLD METALLIZATION
.HIGH SATURATED POWER CAPABILITY
.DIFFUSED EMITTER BALLAST
RESISTORS
. P
OUT
20 W MIN. WITH 7.5 dB GAIN
=
SD1459
TV/LINEAR APPLICATIONS
.500 Dia .550 4L STUD (M164)
epoxy sealed
ORDER CODE
SD1459
PIN CONNECTION
BRANDING
SD1459
DESC RIPTIO N
The SD1459 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class A operation in
VHF and Band III television transmitters and transposers.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DATA
R
TH(j-c)
Collector-Base Voltage 60 V
Collector-Emitter Voltage 30 V
Emitter-Base Voltage 4.0 V
Device Current 16 A
Power Dissipation 150 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.2 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
September 9, 1993
1/5
SD1459
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CEOIC
BV
CERIC
BV
EBOIE
h
FE
= 100 mA IE= 0mA 60 — — V
= 100 mA IB= 0mA 30 — — V
= 100 mA RBE= 10Ω 60 — — V
= 20 mA IC= 0mA 4.0 — — V
VCE= 5V IC=1 A 10 — 120 —
DYNAMIC
Symbol Test Conditions
P
OUT
G
C
OB
Load
f = 225 MHz VCE= 28 V IC= 3.5 A 20 — — W
f = 225 MHz VCE= 28 V IC= 3.5 A 7.5 — 8.0 dB
P
f = 1 MHz VCB= 30 V — — 150 pf
f = 225 MHz VCE= 28 V IC= 3.5 A ∞:1 — — VSWR
Mismatch
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Uni t
2/5
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