RF & MICROWAVE TRANSISTORS
.170 - 230 MHz
.28 VOLTS
.IMD −55 dB
. COMMON EMITTER
.GOLD METALLIZATION
.INTERNAL INPUT MATCHING
.HIGH SATURATED POWER CAPABILITY
.DESIGNED FOR HIGH POWER LINEAR
OPERATION
.P
OUT
14 W MIN. WITH 14.0 dB GAIN
=
SD1458
TV\LINEAR APPLICATIONS
.500 6LF L (M111)
epoxy sealed
ORDER CODE
SD1458
PIN CONNECTION
BRANDING
SD1458
DESC RIPTION
The SD1458 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class A operation in
VHF and band III television transmitters and transposers.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 60 V
Collector-Emitter Voltage 35 V
Emitter-Base Voltage 4.0 V
Device Current 10 A
Power Dissipation 140 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.5 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/5
SD1458
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CER
CEO
EBO
FE
IC= 50mA RBE= 10Ω 60 — — V
IC= 50mA IB= 0mA 35 — — V
IE= 10mA IC= 0mA 4.0 — — V
VCE= 50V IE= 0mA — — 5 mA
VCE= 5V IC= 1A 10 — 100 —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
P
IMD
C
OB
Note: IMD
f = 225 MHz VCE= 28 V IC= 2.5 A 14 — — W
f = 225 MHz VCE= 28 V IC= 2.5 A 14 — — dB
f = 225 MHz VCE= 28 V IC= 2.5 A — — −55 dBc
3
f = 1 MHz VCB= 28 V — — 80 pF
3
- Vi sion Car rie r - 8dB
-SoundCarrier-7dB
- Si deband Carrier - 16dB
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/5
TYPICA L PERFO R MA NCE
POWER OUTPUT vs POWER INPUT IMD vs POWER OUTPUT
SD1458
THERMAL RESISTANCE vs CASE
TEMPERATURE
3/5
SD1458
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0111
4/5
SD1458
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability forthe
consequences of useof such information nor forany infringement of patents orother rights of third parties which may results from itsuse. No
license isgranted byimplication or otherwiseunderany patent or patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication aresubject to changewithout notice. This publication supersedesand replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse ascritical componentsin lifesupport devicesor systemswithout express
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
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Singapore - Spain - Sweden- Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
5/5
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