SGS Thomson Microelectronics SD1458 Datasheet
RF & MICROWAVE TRANSISTORS
.170 - 230 MHz
.28 VOLTS
.IMD −55 dB
. COMMON EMITTER
.GOLD METALLIZATION
.INTERNAL INPUT MATCHING
.HIGH SATURATED POWER CAPABILITY
.DESIGNED FOR HIGH POWER LINEAR
OPERATION
.P
OUT
14 W MIN. WITH 14.0 dB GAIN
=
SD1458
TV\LINEAR APPLICATIONS
.500 6LF L (M111)
epoxy sealed
ORDER CODE
SD1458
PIN CONNECTION
BRANDING
SD1458
DESC RIPTION
The SD1458 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class A operation in
VHF and band III television transmitters and transposers.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 60 V
Collector-Emitter Voltage 35 V
Emitter-Base Voltage 4.0 V
Device Current 10 A
Power Dissipation 140 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.5 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/5
SD1458
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
CES
h
CER
CEO
EBO
FE
IC= 50mA RBE= 10Ω 60 — — V
IC= 50mA IB= 0mA 35 — — V
IE= 10mA IC= 0mA 4.0 — — V
VCE= 50V IE= 0mA — — 5 mA
VCE= 5V IC= 1A 10 — 100 —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
P
IMD
C
OB
Note: IMD
f = 225 MHz VCE= 28 V IC= 2.5 A 14 — — W
f = 225 MHz VCE= 28 V IC= 2.5 A 14 — — dB
f = 225 MHz VCE= 28 V IC= 2.5 A — — −55 dBc
3
f = 1 MHz VCB= 28 V — — 80 pF
3
- Vi sion Car rie r - 8dB
-SoundCarrier-7dB
- Si deband Carrier - 16dB
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/5
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