SGS Thomson Microelectronics SD1457 Datasheet
.108 MHz
.28 VOLTS
.EFFICIENCY 75%
.COMMON EMITTER
.GOLD METALLIZATION
.P
OUT
75 W MIN. WITH 10.0 dB GAIN
=
SD1457
RF & MICROWAVE TRANSISTORS
FM BROADCAST APPLICAT IONS
.500 4LF L (M174)
epoxy sealed
ORDER CODE
SD1457
PIN CON NECTION
BRANDING
SD1457
DESC RIPTIO N
The SD1457 is a 28 V gold metallized epitaxial
silicon NPN planar transistor designed for FM VHF
broadcast transmitters.
This device utlizes diffused emitter resistors to
achieve infinite VSWR at rated operating conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 30 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 4.0 V
Device Current 10 A
Power Dissipation 100 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.5 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/5
SD1457
ELECTRICAL SPECIF ICATIO NS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CERIC
BV
CEOIC
BV
EBOIE
h
FE
= 50mA IE= 0mA 65 — — V
= 50mA RBE= 10Ω 60 — — V
= 50mA IB= 0mA 30 — — V
= 10mA IC= 0mA 4.0 — — V
VCE= 5V IC= 1A 20 — 150 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test C ond itions
P
OUT
G
η
cf=108 MHz PIN= 7.5 W VCE= 28 V 70 — — %
C
OB
f = 108 MHz PIN= 7.5 W VCE= 28 V 75 — — W
f = 108 MHz PIN= 7.5 W VCE= 28 V 10 — — dB
P
f = 1 MHz VCB= 30 V — — 85 pF
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT vs POWER INPUT
THERMAL RESISTANCE vs CASE
TEMPERATURE
2/5
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