SGS Thomson Microelectronics SD1455 Datasheet
RF & MICROWAVE TRANSISTORS
.170 - 230 MHz
.25 VOLTS
.IMD − 55dB
. COMMON EMITTER
.GOLD METALLIZATION
.HIGH SATURATED POWER CAPABILITY
.DIFFUSED EMITTER BALLAST
RESISTORS
. D ESI GN ED FOR HIGH POWER LINEAR
OPERATION
.P
OUT
20 W MIN. WITH 8.0 dB GAIN
=
SD1455
TV/LINEAR APPLICATIONS
.500 4L ST UD (M130)
epoxy sealed
ORDER CODE
SD1455
PIN CONNECTION
BRANDING
SD1455
DESC RIPT ION
The SD1455 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class A operation in
VHF and Band III television transmitters and transposers.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Emitter Voltage 35 V
Collector-Emitter Voltage 60 V
Emitter-Base Voltage 4.0 V
Device Current 8.0 A
Power Dissipation 140 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.5 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
July 1993
1/4
SD1455
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CERIC
BV
CEOIC
BV
EBOIE
I
CES
h
FE
= 50 mA IE= 0mA 65 — — V
= 50 mA RBE= 10 Ω 60 — — V
= 50 mA IB= 0mA 35 — — V
= 10 mA IC= 0 mA 4.0 — — V
VCE= 50 V VBE= 0V — — 5 mA
VCE= 5V IC=1A 20 — 120 —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
IMD3*P
C
OB
Note: * f=225 MHz
f = 225 MHz VCE= 25 V IC= 2.5 A 20 — — W
f = 225 MHz VCE= 25 V IC= 2.5 A 8.0 9.0 — dB
P
= 14 W VCE= 25 V IC= 2.5 A — −55 — dBc
OUT
f = 1 MHz VCB= 30 V — — 85 pF
3 Tone Testing
Vision Carrier −8dB/ref
Sound Carrier−7dB/ref
Sideband Carr ier −16dB / ref
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT vs POWER INPUT
INTERMODULATION DISTORTION
vs POWER OUTPUT
2/4
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