SGS Thomson Microelectronics SD1449 Datasheet
.860 MHz
.20 VOLTS
.COMMON EMITTER
.GOLD METALLIZATION
.CLASS A LINEAR OPERATION
.P
= 1.0 W MIN. WITH 10.0 dB GAIN
OUT
SD1449 (TCC597)
RF & MICROWAVE TRANSISTORS
UHF TV\LINEAR APPLICATIONS
.280 4L STUD (M122)
epoxy sealed
ORDER CO DE
SD1449
PIN CONNECTION
BRANDING
TCC597
DESCRIPTION
The SD1449 is a silicon NPN bipolar device specifically designed for high linearity applications in
the UHF frequency range including TV Bands IV
and V.
Gold metallization and emitter ballasting assure
high reliability under Class A linear amplifier operation.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMAL DATA
R
TH(j-c)
Collector-Base Voltage 45 V
Collector-Emitter Voltage 25 V
Emitter-Base Voltage 3.5 V
Device Current 1.2 A
Power Dissipation 19.4 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 9.0 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
July 27, 1994
1/4
SD1449 (TCC597)
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
CBOIC
BV
CERIC
BV
CEOIC
BV
EBOIE
I
CBO
h
FE
= 2 mA IE = 0 mA 45 — — V
= 40 mA RBE = 10 Ω 50 — — V
= 40 mA IB = 0 mA 24 — — V
= .5 mA IC = 0 mA 3.5 — — V
VCB = 28 V IE = 0 mA — — 0.45 mA
VCE = 5 V IC = 200 mA 20 — 120 —
DYNAMIC
Symbol Test Conditi ons
1
P
OUT
P
G
IMD
IMD
C
OB
Note 1: PIN = 0.1W
Note 2: P
Note 3: L ev els rel a tive t o P
f = 860 MHz VCE = 20 V IC = 440 mA 1 — — W
2
f = 860 MHz VCE = 20 V IC = 440 mA 10 — — dB
3
P
3
3
3
= 1 W VCE = 20 V IC = 440 mA — — −58 dBc
SYNC
P
= 2 W VCE = 20 V IC = 440 mA — — −51 dBc
SYNC
f = 1 MHzVCB = 20V — — 7 pF
= 1 W
OUT
SYNC
f1 = 860.0 MHz −8dBc
f2 = 863.5 MHz −16dBc
f3 = 864.5 MHz −7dBc
Valu e
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICAL PERFORMANCE
POWER OUTPUT vs INPUT POWER
2/4
BROADBAN D POWER GAIN vs F REQUENCY
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