SGS Thomson Microelectronics SD1446 Datasheet
.50 MHz
.12.5 VOLTS
.EFFICIENCY 55%
.COMMON EMITTER
.GOLD METALLIZATION
.P
OUT
70 W MIN. WITH 10 dB GAIN
=
SD1446
RF & MICROWAVE TRANSISTORS
HF/VH F APPLICA TIONS
.380 4LF L (M113)
epoxy sealed
ORDER CODE
SD1446
PIN CONNECTION
BRANDING
SD1446
DESC RI PT ION
The SD1446 is a 12.5 V Class C epitaxial silicon
NPN planar transistor designed primarily for land
mobile transmitter applications. Thisdevice utilizes
emitter ballasting and is extremely stable and capable of withstanding high VSWR under operating
conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 36 V
Collector-Emitter Voltage 18 V
Emitter-Base Voltage 3.5 V
Device Current 12.0 A
Power Dissipation 183 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 1.05 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/5
SD1446
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
BV
I
CES
h
CBO
CES
CEO
EBO
FE
IC= 50mA IE= 0mA 36 — — V
IC= 100mA VBE= 0V 36 — — V
IC= 50mA IB= 0mA 18 — — V
IE= 10mA IC= 0mA 3.5 — — V
VCE= 15V IE= 0mA — — 10 mA
VCE= 5V IC= 5A 10 — — —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test Cond itions
P
OUT
G
P
η
cf=50 MHz PIN= 7W VCE= 12.5 V — 55 — %
C
OB
f = 50 MHz PIN= 7W VCE= 12.5 V 70 — — W
f = 50 MHz PIN= 7W VCE= 12.5 V 10 — — dB
f = 1 MHz VCB= 12.5V — — 300 pF
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT vs POWER INPUT
2/5
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