.860 MHz
.COMMON EMITTER
.GOLD METALLIZATION
.CLASS A LINEAR OPERATION
.P
= 2 W MIN. WITH 8.5 dB GAIN
OUT
SD1437
RF & MICROWAVE TRANSISTORS
UHF TV/LI NEAR APPLI CATI ONS
.280 4L STUD (M122)
epoxy sealed
ORDER CODE
SD1437
PIN CONNECT I ON
DESCRIPTIO N
The SD1437 is a silicon NPN bipolar device specifically designed for high linearity applications in
the UHF frequency range including TV Bands IV
and V.
Gold metallization and emitter ballasting assure
high reliability under Class A linear amplifier operation.
ABSOLUT E MAXI MUM RATING S (T
Symbol Parameter Valu e Unit
V
V
V
P
T
CBO
CEO
EBO
I
C
DISS
T
J
STG
Collector-BaseVoltage 45 V
Collector-EmitterVoltage 25 V
Emitter-BaseVoltage 4.0 V
Device Current 1.2 A
Power Dissipation 19.4 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
− 65 to +150
BRAN DI N G
TCC593
°
C
°
C
THERMAL DATA
R
TH(j-c)
June 13, 1995 1/3
Junction-CaseThermal Resistance 9.0
°C/W
SD1437
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol T est Conditions
BV
BV
BV
I
CBO
h
CBO
CEO
EBO
FE
IC= 10 mA IE= 0mA
IC= 80 mA IB= 0mA
IE= 1mA IC=0mA
VCB= 28 V IE= 0mA
VCE= 20 V IC= 250 mA
DYNAMIC
Symbol Test C onditi ons
1
P
OUT
G
P
IMD
C
OB
Note 1: P
Note 2: P
Note 3: Levels relative to P
f = 860 MHz VCE= 25 V IC= 450 mA
2
f=860 MHz VCE= 25 V IC= 450 mA
3
P
3
= 2W VCE= 25 V IC= 450 mA
SYNC
f = 1 MHz VCB= 25 V
0.3 W
=
IN
2W
=
OUT
SYNC
f
860.0 MH z −8dBc
=
1
863.5 MH z −16dBc
f
=
1
f
864.5 MH z −7dBc
=
1
Value
Min. Typ. Max.
Unit
45 — — V
25 — — V
4.0 — — V
— — 0.45 mA
10 — 100 —
Value
Min. Typ. Max.
Unit
2——W
8.5 — — dB
— −
60
—dBc
——10pF
June 13, 1995 2/3