SGS Thomson Microelectronics SD1433 Datasheet
.470 MHz
.12.5 VOLTS
.CLASS C
. EFFICIENCY 60%
.COMMON EMITTER
.P
OUT
10 W MIN. WITH 8.0 dB GAIN
=
SD1433
RF & MICROWAVE TRANSISTORS
UHF MOBILE APPLI CATION S
.280 4L ST UD (M122)
epoxy sealed
ORDER CODE
SD1433
PIN CONNECTION
BRANDING
SD1433
DESC RIPT ION
The SD1433 is a Class C epitaxial silicon NPN
planar transistor designed for driver applications
in the 450 - 512 MHz frequency range. This device
uses an emitter ballasted geometry specifically designed for optimum stable power gain, maximum
efficiency and infinite VSWR.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 36 V
Collector-Emitter Voltage 16 V
Collector-Emitter Voltage 36 V
Emitter-Base Voltage 4.0 V
Device Current 2.5 A
Power Dissipation 58 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 3.0 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
November 1992
1/5
SD1433
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
I
I
CES
CBO
h
CES
CEO
EBO
FE
IC= 25m A VBE= 0V 36 — — V
IC= 20mA IB= 0mA 16 — — V
IE= 10mA IC= 0mA 4.0 — — V
VCE= 10V IE= 0mA — — 3 mA
VCB= 15V IE= 0mA — — 2 mA
VCE= 5V IC= 1A 10 — — —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
C
P
OB
f = 470 MHz PIN= 2.0 W VCE= 12.5 V 10 — — W
f = 470 MHz P
= 10 W VCE= 12.5 V 7 — — dB
OUT
f = 1 MHz VCB= 12.5 V — 19 — pF
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT vs POWER INPUT
POWER OUTPUT vs FREQUENCY
POWER G AIN & EFFICIENCY
vs POWER INPUT
2/5
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