800-900 MHz BASE STATIO N APPLICAT IONS
.800 - 900 MHz
.24 VOLTS
.COMMON EMITTER
.GOLD METALLIZATION
.INTERNAL INPUT MATCHING
.CLASS AB LINEAR OPERATION
.P
OUT
30 W MIN. WITH 7.5 dB GAIN
=
SD1424
RF & MICROWAVE TRANSISTORS
.250 x .320 4LF L (M156)
epoxy sealed
ORDER CODE
SD1424
PIN CONNECTION
BRANDING
SD1424
DESC RIPTION
The SD1424 is a gold metallized epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation in
cellular base station application.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 48 V
Collector-Emitter Voltage 45 V
Emitter-Base Voltage 4.0 V
Device Current 4 A
Power Dissipation 87.5 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 2.0 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
65 to +150
−
°
C
°
C
October 7, 1993
rev. 1 1/5
SD1424
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CEOIC
BV
EBOIE
I
CBO
h
FE
= 50mA IE= 0mA 48 50 — V
= 20mA IB= 0mA 25 30 — V
= 5mA IC= 0mA 3.5 4.0 — V
VCB= 24V IE= 0mA — — 1.0 mA
VCE= 10V IC= 100mA 20 — 100 —
DYNAMIC
Symbol Test C ond itions
P
OUT
G
η
cf=960 MHz P
C
OB
Note: I
f = 960 MHz PIN= 5.3 W VCC= 24 V 30 — — W
f = 960 MHz P
P
= 30 W VCC= 24 V 7.5 — — dB
OUT
= 30 W VCC= 24 V 45 50 — %
OUT
f = 1 MHz VCB= 24 V (each side) — 20 24 pF
150mA
=
CQ
Value
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT vs POWER INPUT
2/5 rev. 1
TEST CIRC UIT L AYO UT
SD1424
rev. 1 3/5
SD1424
TEST CIRCUIT
C1, C2,
C3 : 0.8 - 8pF Variable Capacitors
C4, C5,
C6, C7 : 62pF
C8 : 22µF
C9 : 180pF
C10 : 47µF, 63V
C11 : 180pF
C12 : 10µF, 63V
D1, D2 : SD1423 Devices
L1, L2 : #22AWG with Ferrite Core
L3 : 4 Turns, #22 AWG
L4 : 2 Turns, #22 AWG
L5 : 5 Turns, #22 AWG
T1, T2 :λ/4 Transformers
Material: Epsilam 10, Er=10.5, Height=.050”
4/5 rev. 1
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0156
SD1424
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronicsassumes no responsability forthe
consequences of useof such information nor forany infringement of patents orother rights of third parties which may results from itsuse. No
license isgranted byimplication or otherwiseunderany patent or patentrights ofSGS-THOMSON Microelectronics. Specificationsmentioned
in this publication aresubject to changewithout notice. This publication supersedes andreplaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts arenot authorizedforuse ascritical componentsin lifesupport devicesor systemswithout express
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All RightsReserved
Australia - Brazil - France- Germany - HongKong - Italy- Japan - Korea - Malaysia - Malta - Morocco -The Netherlands -
Singapore - Spain - Sweden- Switzerland - Taiwan - Thailand - UnitedKingdom - U.S.A
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
rev. 1 5/5
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