SGS Thomson Microelectronics SD1423 Datasheet
800-960MHz BASE ST ATION APPLICATIONS
.800 - 960 MHz
.24 VOLTS
.EFFICIENCY 50%
.COMMON EMITTER
.GOLD METALLIZATION
.CLASS AB LINEAR OPERATION
.P
OUT
15 W MIN. WITH 8.0 dB GAIN
=
SD1423
RF & MICR OWAVE TRAN SISTOR S
.230 6LFL (M118)
epoxy sealed
OR DER CODE
SD1423
DESCRIP TION
The SD1423 is a gold metallization epitaxial silicon
NPN planar transistor using diffused emitter ballast
resistors for high linearity Class AB operation for
cellular base station applications. The SD1423 is
designed as a medium power output device or as
the driver for the SD1424.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
V
V
V
P
T
CBO
CEO
CES
EBO
I
C
DISS
T
J
STG
Collector-BaseVoltage 48 V
Collector-Emitter Voltage 25 V
Collector-Emitter Voltage 45 V
Emitter-Base Voltage 3.5 V
Device Current 2.5 A
Power Dissipation 29 W
Junction Temperature +200
Storage Temperature
case
= 25°C)
PI N CO NNE CTI O N
1. Collector 3. Emitter
2. Base
65 to +150
−
BRANDING
SD1423
°
C
°
C
THERMAL DATA
R
TH(j-c)
August 22, 1996
Junction-CaseThermal Resistance 6
°C/W
1/4
SD 1423
ELECTRICAL SPECI FICATIONS (T
case
STATIC
Symbol Tes t Conditions
BV
CBO I
BV
CEO
BV
I
CBO
h
FE
EBO
= 50mA IE= 0mA
C
IC= 20mA IB= 0mA
IE= 5mA IC= 0mA
VCB= 24V IE= 0mA
VCE= 10V IC= 100mA
DYNAMIC
Symbol Test Conditions
P
OUT f = 960 MHz V
P
η
C
OB
f = 960 MHz VCC= 24 V ICQ= 75 mA
G
cf=960 MHz V
f = 1 MHz VCB= 24V
= 24 V ICQ= 75 mA
CC
= 24 V ICQ= 75 mA
CC
= 25°C)
Value
Min. Typ. Max.
Un it
48 50 — V
25 30 — V
3.5 4.0 — V
— — 1.0 mA
20 — 100 —
Value
Min. Typ. Ma x.
Un it
15 — — W
8——dB
45 50 — %
—2024pF
TYPI CAL PERFORMANCE
IMPEDANCE DATA
P OWER OUTPUT vs POWER INPUT
FREQ.
Z
(Ω)Z
IN
CL
900 MHz 1.30 + j 1.98 3.99 + j 5.55
930 MHz 1.42 + j 2.31 3.18 + j 4.97
960 MHz 1.45 + j 2.62 2.96 + j 4.07
= 15 W
P
OUT
= 75 mA
V
CE
= 24 V
I
CQ
(Ω)
2/4
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