SGS Thomson Microelectronics SD1420 Datasheet
.860 - 960 MHz
.24 VOLTS
.COMMON EMITTER
.GOLD METALLIZATION
.CLASS A LINEAR OPERATION
.P
= 2.1 W MIN. WITH 9.0 dB GAIN
OUT
SD1420
RF & MICROWAVE TRANSISTORS
800-900 MHz BASE STATION APPLICATIONS
.280 4L STUD (M122)
epoxy sealed
ORDER CO DE
SD1420
PIN CONNECTION
BRANDING
SD1420
DESCRIPTION
The SD1420 is a gold metallized epitaxial silicon
NPN planar transistor designed for high linearity
Class A operation Cellular Base Station applications. The SD1420 is also available in a studless
package as the SD1420-01.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMAL DATA
R
TH(j-c)
Collector-Base Voltage 40 V
Collector-Emitter Voltage 28 V
Emitter-Base Voltage 3.5 V
Device Current .250 A
Power Dissipation 8.75 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 20 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
55 to +150
−
°
C
°
C
September 6, 1994
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SD1420
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
CBOIC
BV
CEOIC
BV
EBOIE
I
CBO
h
FE
= 1 mA IE = 0 mA 40 — — V
= 1 mA IB = 0 mA 28 — — V
= 1 mA IC = 0 mA 3.5 — — V
VCB = 24 V IE = 0 mA — — .5 mA
VCE = 5 V IC = 100 mA 20 — 120 —
DYNAMIC
Symbol Test Conditi ons
P
OUT
P
C
OB
Note: *PIN = 0.27 W
f = 960 MHz VCE = 24 V ICQ = 200 mA 2.1 — — W
f = 960 MHz VCE = 24 V ICQ = 200 mA 8.9 9.0 — dB
G
f = 1 MHz VCB = 28 V — — 5 pF
Valu e
Min. Typ. Max.
Value
Min. Typ. Max.
Unit
Unit
2/3
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