SGS Thomson Microelectronics SD1414-12 Datasheet



RF & MICROWAVE TRANSISTORS

■ 960 MHz

■ 13.5 VOLTS

■ COMMONBASE

■ P

DESCRIPTION

The SD1414-12 is a 13.5 V Class C Epitaxial
silicon NPN planar transistor designed for
amplifierapplicationsup to960 MHz.

Internal input matching and common base
configuration assure optimum gain and efficiency
in broad bandapplications.

= 40 W MIN. WITH 4.3 dBgain

OUT

SD1414-12

800-900 MHz APPLICATIONS

PRELIMINARY DATA

.230 6LFL (M142)

epoxy sealed

ORDER CODE BRANDING

SD1414-12 SD1414-12

PIN CONNECTION

1. Collector 3. Base

2. Emitter

ABSOLUTE MAXIMUM RATINGS (T

Symb o l Para meter Val u e Uni t

V
V
V
V

P

DISS

T

Collector-Base Voltage 36 V

CBO

Collector-Emitter Voltage 18 V

CEO

Collector-Emitter Voltage 36 V

CES

Emitter-Bas e Voltage 4.0 V

EBO

Device Current 9.0 A

I

C

Power Dissipation 150 W
Max. Operating Junction T e m per at ure +200

T

j

Sto rage Temperature -65 to 1 50

STG

case

=25oC)

THERMAL DATA

R

th(j-c)

December 1999

Junct ion-Case Thermal R e s ist ance 1.2

o
o

o

C/W

C
C

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SD1414-12

ELECTRICAL SPECIFICATION (T

case

=25oC)

STATIC

Symbol Para met e r Min. Typ . Ma x. Unit

BV

CESIC

BV

CEOIC

BV

EBOIE

I

CBO

h

FE

=50mA VBE=0V 36 V
=50mA IB=0mA 18 V

=10mA IC=0mA 4.0 V
VCB=15V IE=0mA 5 mA
VCE=5V IC=1A 20 200

DYNAMIC

Symbol Para met e r Min. Typ . Ma x. Unit

P

OUT

G

η

Load

Mismatch

C

f = 960 M Hz PIN=15W VCC=13.5V 40 W
f = 960 M Hz PIN=15W VCC=13.5V 4.3 dB

P

f = 960 M Hz PIN=15W VCC= 13.5 V 50 %

C

f = 960 M Hz P

f=1MHz VCB= 1 3.5 V 8 0 pF

OB

=15W VCC= 15 V All Ph ases 10: 1 VSW R

IN

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