SGS Thomson Microelectronics SD1411 Datasheet
.30 MHz
.40 VOLTS
.IMD −30 dB
.COMMON EMITTER
.GOLD METALLIZATION
.P
= 200 W MIN. WITH 16 dB GAIN
OUT
SD1411
RF & MICROWAVE TRANSISTORS
HF SSB APPLICATIONS
.400 x .425 6LFL (M153)
epoxy sealed
ORDER CO DE
SD1411
PIN CONNECTION
BRANDING
SD1411
DESCRIPTION
The SD1411 is a silicon NPN transistor designed
for telecommunications in HF and VHF frequency
bands. This device utilizes gold metallized die with
diffused emitter resistors to achieve high reliability
and ruggedness.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Unit
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMAL DATA
R
TH(j-c)
Collector-Base Voltage 110 V
Collector-Emitter Voltage 55 V
Emitter-Base Voltage 4.0 V
Device Current 40 A
Power Dissipation 330 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.36 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
65 to +150
−
°
C
°
C
October 1992
1/3
SD1411
ELECTRICAL SPECIFICATIONS (T
case
= 25°C)
STATIC
Symbol Test Condi tions
BV
CBOIC
BV
CESIC
BV
CERIC
BV
CEOIC
BV
EBOIE
I
CES
h
FE
= 200mA IE = 0mA 110 — — V
= 200mA VBE = 0V 110 — — V
= 200mA RBE = 10Ω 100 — — V
= 200mA IB = 0mA 55 — — V
= 20mA IC = 0mA 4.0 — — V
VCE = 45V IE = 0mA — — 20 mA
VCE = 6V IC = 10A 15 — 80 —
Min. Typ. Max.
Valu e
DYNAMIC
Symbol Test Conditi ons
P
OUT
G
f = 30 MHz VCE = 40 V ICQ = 150 mA 200 — — W
f = 30 MHz VCE = 40 V ICQ = 150 mA 16 — — dB
P
Value
Min. Typ. Max.
IMD f = 30 MHz VCE = 40 V ICQ = 150 mA — — −30 dB
C
OB
f = 1 MHz VCB = 50 V — — 360 pF
Unit
Unit
2/3
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