.30 MHz
.28 VOLTS
.IMD −30 dB
. COMMON EMITTER
.GOLD METALLIZATION
.P
OUT
125 W MI N. WITH 15 dB GAIN
=
SD1407
RF & MICROWAVE TRANSISTORS
HF SSB APPLICA TIONS
.500 4LF L (M174)
epoxy sealed
ORDER CODE
SD1407
PIN CONNECTION
BRANDING
1407
DESC RIPTIO N
The SD1407 is a 28 V epitaxial silicon NPN planar
transistor designed primarily for SSB communications. This device utilizes state-of-the-art diffused
emitter ballasting for improved ruggedness and
reliability.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 36 V
Emitter-Base Voltage 4.0 V
Device Current 20 A
Power Dissipation 270 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.65 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
October 1992
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SD1407
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
BV
I
CES
h
CBO
CES
CEO
EBO
FE
IC= 100mA IE= 0mA 65 — — V
IC= 100mA VBE= 0V 65 — — V
IC= 100mA IB= 0mA 35 — — V
IE= 10mA IC= 0mA 4.0 — — V
VCE= 30V IE= 0mA — — 15 mA
VCE= 5V IC= 5A 10 — 200 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test Cond itions
P
OUT
G
P
f = 30 MHz PIN= 3.95 W VCE= 28 V 125 — — W
f = 30 MHz PIN= 3.95 W VCE= 28 V 15 16 — dB
Value
Min. Typ. Max.
IMD* f = 30 MHz VCE= 28 V ICQ= 100 mA — −34 −30 dB
C
OB
Note: *P
f = 1 MHz VCB= 30 V — 250 — pF
OUT
100W P EP, f
=
30 + 30.001 M H z
=
O
Unit
Unit
TYPICA L PERFO R MA NCE
SAFE OPERATING AREA
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TEST CIRCUI T
SD1407
C1 : 24 -200pF Arco 425
C2,C4 : 50 - 380pF Arco 465
C3 : 9 - 180pF Arco 463
C5 : 10µF, Electrolytic, 35Vdc
C6 : 0.01µF, 100V, Ceramic
L1 : 4 Turns, #16 AWG, Tinned, 0.40” I.D.
L2,L5 : 1 Turn, #22 AWG, Tinned, formed with VK-200
L4 : 17 Turns, #18 Enameled Wire Wrapped Around R1
R1 : 390ΩResistor (2 Watt)
#4B Ferroxcube
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SD1407
PACKAGE MECHANICAL DATA
Ref.: Dwg. No.12-0174
Information furnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement ofpatents or other rights of third partieswhich may results from its use. No
license isgranted byimplication orotherwise underany patentor patentrights of SGS-THOMSON Microelectronics. Specificationsmentioned
in this publication are subject to change without notice. Thispublication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproductsare notauthorized foruse ascritical componentsinlife support devicesor systems withoutexpress
written approvalof SGS-THOMSON Microelectonics.
1994 SGS-THOMSON Microelectronics- All Rights Reserved
Australia - Brazil - France- Germany - HongKong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands-
Singapore - Spain - Sweden- Switzerland - Taiwan -Thailand - United Kingdom - U.S.A
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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