SGS Thomson Microelectronics SD1407 Datasheet
.30 MHz
.28 VOLTS
.IMD −30 dB
. COMMON EMITTER
.GOLD METALLIZATION
.P
OUT
125 W MI N. WITH 15 dB GAIN
=
SD1407
RF & MICROWAVE TRANSISTORS
HF SSB APPLICA TIONS
.500 4LF L (M174)
epoxy sealed
ORDER CODE
SD1407
PIN CONNECTION
BRANDING
1407
DESC RIPTIO N
The SD1407 is a 28 V epitaxial silicon NPN planar
transistor designed primarily for SSB communications. This device utilizes state-of-the-art diffused
emitter ballasting for improved ruggedness and
reliability.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 65 V
Collector-Emitter Voltage 36 V
Emitter-Base Voltage 4.0 V
Device Current 20 A
Power Dissipation 270 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.65 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
October 1992
1/4
SD1407
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
BV
I
CES
h
CBO
CES
CEO
EBO
FE
IC= 100mA IE= 0mA 65 — — V
IC= 100mA VBE= 0V 65 — — V
IC= 100mA IB= 0mA 35 — — V
IE= 10mA IC= 0mA 4.0 — — V
VCE= 30V IE= 0mA — — 15 mA
VCE= 5V IC= 5A 10 — 200 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test Cond itions
P
OUT
G
P
f = 30 MHz PIN= 3.95 W VCE= 28 V 125 — — W
f = 30 MHz PIN= 3.95 W VCE= 28 V 15 16 — dB
Value
Min. Typ. Max.
IMD* f = 30 MHz VCE= 28 V ICQ= 100 mA — −34 −30 dB
C
OB
Note: *P
f = 1 MHz VCB= 30 V — 250 — pF
OUT
100W P EP, f
=
30 + 30.001 M H z
=
O
Unit
Unit
TYPICA L PERFO R MA NCE
SAFE OPERATING AREA
2/4
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