SGS Thomson Microelectronics SD1405 Datasheet
.30 MHz
.12.5 VOLTS
.COMMON EMITTER
.IMD −32 dB
. GOLD METALLIZATION
.P
OUT
75 W MIN. WITH 13 dB GAIN
=
SD1405
RF & MICROWAVE TRANSISTORS
HF SSB APPLICA TIONS
.500 4LF L (M174)
epoxy sealed
ORDER CODE
SD1405
PIN CONNECTION
BRANDING
SD1405
DESC RI PT ION
The SD1405 is a 12.5 V Class C epitaxial silicon
NPN planar transistor designed primarily for HF
communications. This device utilizes diffused emitter resistors to achieve infinte VSWR under rated
operating conditions.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CEO
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 36 V
Collector-Emitter Voltage 18 V
Emitter-Base Voltage 4.0 V
Device Current 20 A
Power Dissipation 270 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 0.65 °C/W
case
= 25°C)
1. Collector 3. Base
2. Emitter 4. Emitter
65 to +150
−
°
C
°
C
July 1993
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SD1405
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
BV
BV
BV
I
CES
h
CBO
CES
CEO
EBO
FE
IC= 50 mA IE= 0mA 36 — — V
IC= 100 mA VBE= 0V 36 — — V
IC= 100 mA IB= 0mA 18 — — V
IE= 10 m A IC= 0 mA 4.0 — — V
VCE= 15 V IE= 0mA — — 15 mA
VCE= 5V IC=5A 20 — 300 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test Cond itions
P
OUT
G
P
f = 30 MHz PIN= 3.8 W VCE= 12.5 V 75 — — W
f = 30 MHz PIN= 3.8 W VCE= 12.5 V 13 — — dB
Value
Min. Typ. Max.
IMD* f = 30 MHz VCE= 12.5 V ICQ= 100 mA −32 — — dB
C
OB
Note: *P
f = 1 MHz VCB= 12 V — 350 — pF
OUT
60WPEP , f
=
30 + 30.001 MHz
=
O
Unit
Unit
TYPICA L PERFO R MA NCE
POWER OUTPUT vs POWER INPUT POWER OUTPUT vs POWER INPUT
TWO TONE TEST
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