SGS Thomson Microelectronics SD1398 Datasheet
.850 - 960 MHZ
.24 VOLTS
.COMMON EMITTER
.O VERLAY GEOMETRY
.GOLD METALLIZATION
.P
OUT
6.0 W MIN. WITH 10.0 dB GAIN
=
SD1398
RF & MICROWAVE TRANSISTORS
850-96 0 MHz APPLICAT IONS
.230 6LF L (M142)
epoxy sealed
ORDER CODE
SD1398
PIN CONNECTION
BRANDING
SD1398
DESC RIPTION
The SD1398 is a gold metallized epitaxial silicon
NPN transistor designed for high linearity Class
AB operation cellular base station applications. The
SD1398 can also be operated Class C.
The SD1398 is internally input matched and can
be used as a driver for the SD1423 or SD1424.
ABSOLUTE MAXIMUM RATINGS (T
Symbol Parameter Value Uni t
V
CBO
V
CES
V
EBO
I
C
P
DISS
T
J
T
STG
THERMA L DA TA
R
TH(j-c)
Collector-Base Voltage 50 V
Collector-Emitter Voltage 35 V
Emitter-Base Voltage 3.5 V
Device Current 2.4 A
Power Dissipation 53 W
Junction Temperature +200
Storage Temperature
Junction-Case Thermal Resistance 3.3 °C/W
case
= 25°C)
1. Collector 3. Emitter
2. Base
65 to +150
−
°
C
°
C
September 8, 1993
1/6
SD1398
ELECTRICAL SPECIFICA TIONS (T
case
= 25°C)
STATIC
Symbol Test Conditions
BV
CBOIC
BV
CEOIC
BV
EBOIE
I
CEO
I
CBO
h
FE
= 5mA IE= 0mA 50 — — V
= 5mA IB= 0mA 24 — — V
= 5mA IC= 0mA 3.5 — — V
VCE= 24V IE= 0mA — — 1.0 mA
VCB= 24V IE= 0mA — — 1.0 mA
VCE= 10V IC= 0.1A 20 — 100 —
Min. Typ. Max.
Value
DYNAMIC
Symbol Test C ond itions
P
OUT
η
cf=850 — 960 MHz VCE= 24 V ICQ= 25 mA — 50 — %
G
C
OB
Note: P
f = 850 — 960 MHz VCE= 24 V ICQ= 25 mA 6 — — W
f = 850 — 960 MHz VCE= 24 V ICQ= 25 mA 10 12 — dB
P
f = 1 MHz VCB= 24 V — 7.5 8.5 pF
0.60w
=
IN
Value
Min. Typ. Max.
Unit
Unit
TYPICA L PERFO R MA NCE
CLASS AB BROADBAND OUTPUT POWER
vs INPUT POWER OUTPUT POWER vs INPUT POWER
2/6
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